Study of a Solar-Blind Photodetector Based on an IZTO/β-Ga2O3/ITO Schottky Diode

Ultrahigh Photoresponsivity of W/Graphene/β-Ga2O3 Schottky Barrier Deep Ultraviolet Photodiodes

“…However, W/β-Ga 2 O 3 SBPD showed τ r and τ d values of ∼2000 and ∼3000 ms, respectively in Figure b. It can be explained by the persistent photoconductivity (PPC) because of the effect of carriers detrapping mechanism from the interfacial trap levels . This indicates that W/graphene/β-Ga 2 O 3 SBPD has a much faster response than W/β-Ga 2 O 3 SBPD.…”

“…It can be explained by the persistent photoconductivity (PPC) because of the effect of carriers detrapping mechanism from the interfacial trap levels. 31 This indicates that W/graphene/β-Ga 2 O 3 SBPD has a much faster response than W/β-Ga 2 O 3 SBPD. The interfacial state density was extracted from the difference between the low frequency (C LF ) and high frequency (C HF ) as presented in Figure S6.…”

“…This effect predominantly affects the responsivity as well as the rise and delay times of the SBPD. 19,31 Several approaches have been explored to solve these issues, such as doping the surface of β-Ga 2 O 3 , two-dimensional (2D) interlayer, and quantum dots and other nanomaterials. 32−35 Among them, graphene exhibits excellent photoresponse properties due to its broad spectral range, high absorption of light by a single atom layer with the allowance of multiple light paths, ultrafast response, and high quantum efficiency with large electron−hole pairs.…”

“…The inhomogeneity of the Schottky barrier interface, caused by the presence of high charge traps at the metal/β-Ga 2 O 3 interface, significantly impacts the performance of electron–hole pairs’ separation and extraction due to surface recombination. This effect predominantly affects the responsivity as well as the rise and delay times of the SBPD. , Several approaches have been explored to solve these issues, such as doping the surface of β-Ga 2 O 3 , two-dimensional (2D) interlayer, and quantum dots and other nanomaterials. − Among them, graphene exhibits excellent photoresponse properties due to its broad spectral range, high absorption of light by a single atom layer with the allowance of multiple light paths, ultrafast response, and high quantum efficiency with large electron–hole pairs. − Despite these properties of graphene, challenges remain, such as transferring technology for defect-free graphene and mitigating damage during postprocessing in various electronic device applications. For example, wet transferred graphene can contain possible wrinkles, tearing, contamination from residue, or possible surface oxidation .…”

Enhancing β-Ga2O3-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate

“…To achieve solar-blind detection, Gallium oxide (Ga 2 O 3 ) is an ideal semiconductor material due to its wide band gap of approximately 4.9 eV, which corresponds to detection wavelength to the solar-blind region. Over time, Ga 2 O 3 has been employed in different morphologies, including blocks [7], thin films [8,9], and nanostructures [10][11][12][13][14], for realizing SBPDs. Notably, Ga 2 O 3 films are particularly suitable for implementing SBPD arrays [15].…”