Study of a Bound Surface Optical Polaron by a Non‐Perturbative Method

Abstract

The problem of an extrinsic surface optical polaron, bound to an impurity atom, near the surface is investigated for the first time in the framework o f a recently developed canonical transformation method. Energy and wave function for all ranges of the coupling constant (a) and the impurity parameter (/3) are obtained numerically following the canonical transformation method. For a strong impurity the relatively unimportant effect due to the image potential is neglected. The dependence of the energy, the wave function, and the induced potential on a, #? are obtained and shown graphically.Das Problem eines an ein Fremdatom gebundenen optischen Oberfllichen-Storstellenpolarons in der NLhe der Oberflliche wird zum ersten Ma1 im Rahmen der kiirzlich entwickelten Methode der kanonischen Transformation untersucht. Energie und Wellenfunktion werden in allen Bereiohen der Kopplungskonstanten a und des Storstellenparameters /3 numerisch erhalten. Fiir eine starke Storstelle wird der relativ unwesentliche Effekt des Bildpotentials vernachlllssigt. Die Abhlngigkeiten der Energie, der Wellenfunktion und des induzierten Potentials yon a und B werden berechnet und graphisch dargestellt.

Surface Optical Polaron in Magnetic Field

“…2 the electronic wave function The binding is due to magnetic field and also due t o electron-phonon interaction. Our calculation is based on a model which was used earlier [18] and is believed to be realistic [4] for a thin slab of polar material (e.g. LiF).…”

“…The effective mass obtained from such a description will then naturally depend on the coupling constant and the magnetic field. The model Hamiltonian on which this study is based closely resembles that of our previous work [18] except for the fact that the impurity is absent here and the magnetic field is present. The appropriate Hamiltonian for this case is analysed in the following section.…”

Bound polaron in a polar semiconductor heterojunction

“…6 The impurity states of a donor on a semiconductor surface were initially studied three decades ago. 7 Later, the SO phonon effects were investigated for the bound-polaron ground state 8,9 and the excited states. 9 An electron bound to an impurity near the interface of a semiconductor heterojunction was discussed under the influence of a magnetic field.…”