Study of 90-nm MOSFET Subthreshold Hump Characteristics Using Newly Developed MOSFET Array Test Structure

Mizumura, A.; Oishi, Toshiyuki; Yokoyama, N.; Nonaka, M.; Tanaka, Shigeru; Ammo, H.

doi:10.1109/tsm.2005.863257

Cited by 16 publications

(5 citation statements)

References 9 publications

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“…This result agrees to some papers which have been reported. [1][2][3][4][5] It shows that the standard deviation of V th will increase more than 100 mV at 45 nm technology node. This means that reducing of V th variation is strongly required.…”

Section: Resultsmentioning

confidence: 99%

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New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Syunichi

Sugawa

Teramoto

et al. 2007

jjap

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Evaluating the statistical variation of the metal-oxide-semiconductor field-effect transistors (MOSFETs) is important for realizing the accurate analog circuits and highly large-scale-integration (LSI) devices. In this paper, a new evaluation method for the statistical variation of the electrical characteristics of MOSFETs is presented. We have developed the test circuit for understanding the statistical and local variation of MOSFET in very short time. It is demonstrated that a large number of MOSFETs, about 30,000 MOSFETs, are measured in very short time of 0.05 s, and that the measured results are very useful to develop the process technology to reduce the statistical and local characteristic variation.

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Section: Resultsmentioning

confidence: 99%

“…Some statistical evaluation methods have been reported. [1][2][3][4] However, these take relatively long time for the measurement and are difficult to measure larger number of MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Syunichi

Sugawa

Teramoto

et al. 2007

jjap

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show abstract

“…The results in Figs. [3][4][5][6] show that the new TEG is a very important and useful tool to understand the statistical variation for scaled-down devices and accurate analog circuit design, and to develop the process technology to reduce the statistical and local characteristic variation. …”

Section: Discussionmentioning

confidence: 99%

On reasons for strong absorption of light in an optical fibre at high temperature

Yakovlenko

2004

Quantum Electron.

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“…According to previous literature, using a device structure with a new poly-Si gate series layout pattern could reduce the influence of gate leakage and off leakage currents on measured data. 16 Therefore, this research analyzes and discusses the stress effect of an nMOSFET with a protruding gate structure on channel region.…”

Section: Protrudingmentioning

confidence: 99%

A Resultant Stress Effect of Contact Etching Stop Layer and Geometrical Designs of Poly Gate on Nanoscaled nMOSFETs with a Si<SUB>1−x</SUB>Ge<SUB>x</SUB> Channel

Lee¹,

Liu²,

Chen

et al. 2015

j nanosci nanotechnol

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In this research, an n-type metal-oxide-semiconductor field effect transistor (nMOSFET) device with a SiGe channel exerted by the combination of a contact etching stop layer (CESL) and silicon germanium (Si1-xGe(x)) channel stressors is proposed. To explore the foregoing mechanical effect on the stress distribution of nMOSFETs within the channel region, a process-oriented simulated technique is adopted for the concerned nMOSFET device. The loading sources are a 1.1 GPa tensile CESL (t-CESL) and a SiGe channel structure constructed with 0%, 22.5%, and 25%, germanium (Ge) mole fractions. The results of the simulation show that the stress components of the Si1-xGe(x) channel evidently increase when the Ge mole fraction within a Si1-xGe(x) layer is increased. A pulling force exerted on the protruding gate structure by the CESL layer that causes dominant bending deformation and channel stress variation behaviors is a major reason for this phenomenon. Therefore, the degree of bending effect caused by the protruding gate structure is concluded as being the key to determining the trends and stress magnitudes of the Si1-xGe(x) device channel.

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Study of 90-nm MOSFET Subthreshold Hump Characteristics Using Newly Developed MOSFET Array Test Structure

Cited by 16 publications

References 9 publications

New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

On reasons for strong absorption of light in an optical fibre at high temperature

A Resultant Stress Effect of Contact Etching Stop Layer and Geometrical Designs of Poly Gate on Nanoscaled nMOSFETs with a Si<SUB>1−x</SUB>Ge<SUB>x</SUB> Channel

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