Study and Development of Yttrium-Doped Nanoscandate Cathode for High-Power VEDs

Shukla, Sushil Kumar; Singh, A. K.; Singh, T. P.; Saini, Santosh Kumar; Poonia, Ravi; Raju, R. Srinivasa; Barik, R. K.

doi:10.1109/ted.2016.2619353

Cited by 6 publications

(1 citation statement)

References 26 publications

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“…This is attributed to the higher absorbability of Ba and Sc on the surface whereas the emission properties are yet to be reported. Researchers have also demonstrated that Yttria co-doped with the W, Sc and the other impregnants, improve the emission capability due to the strong Y-O bond resulting in low evaporation and formation of thick semiconducting layer at the surface, which enable field penetration thereby reducing the work function [37]. The chronological evolution in the emission capability of a thermionic dispenser cathode has been represented in the form of a graph as shown in Fig.…”

Section: Scandate Cathodesmentioning

confidence: 99%

A Review of Electron Emitters for High-Power and High-Frequency Vacuum Electron Devices

Singh

Shukla

Ravi³

et al. 2020

IEEE Trans. Plasma Sci.

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This work reviews the progress in the area of high current density electron emitters, specifically for use in high frequency and high-power microwave vacuum electron devices. The review is divided into two subsections: 1) thermionic cathodes and 2) field emission cathodes. The thermionic cathode section includes the discussion on the M-type, MM-type, Scandate and the CPD cathodes. CPD cathode promises better usability in a practical device as compared to the Scandate cathodes which are limited by emission nonuniformity, poor resistance to poisoning/ion bombardment and low life. With the increasing demand for miniaturized and high power VEDs in the near future, the development of high current density field emission cathodes is of immediate interest to the VED community. The Spindt, CNT, and graphene-based emitters are the potential candidates in the field emitters section. Graphene-based film cathodes, when compared to the Mo/Si FEAs and the CNTs, offer larger emission area as well as high current carrying capability. This review includes the evolution of the emission capabilities of the emitters, state-of-the-art performances, and possible future developments. Index Terms-Dispenser cathodes, field emitter arrays (FEAs), vacuum electron devices (VEDs). I. INTRODUCTION R ECENTLY, the development of a compact terahertz (THz) microwave vacuum electron devices (VEDs) have received considerable attention for a variety of application areas such as communication, remote sensing, security, and medical imaging. These devices offer high-energy conversion efficiency, thermal robustness, and radiation hardness compared to their solid-state counterpart [1]. With the reduction in the transverse dimension of the device at high frequency, the need for a copious, rugged, and high emission density electron source is probably one of the greatest technological challenges in realizing a compact high frequency VEDs.

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Section: Scandate Cathodesmentioning

confidence: 99%