Study and analysis of novel RF MEMS switched capacitor

Abstract

In this paper we have designed and analyzed shunt capacitive fixed-fixed RF MEMS switch to maintain low actuation voltage. The pull - in voltage of the proposed switch is 7.7V for 2 um air gap. The electromagnetic analysis for the designed structure is, return loss is -23dB in the range of 1-40 GHz, insertion loss is -0.04dB at a frequency range of 1-40 GHz and isolation is - 38.5dB obtained at a frequency of 23.5 GHz. Mechanical analysis for the designed structure is also performed using FEM tool.

Performance Analysis of Dual Edge Triggered Memory Cells using Multiple C-Elements

“…A Detailed scrutiny of various single edge triggered memory cells is studied in [13]. Low power very large scale integrated (VLSI) circuits have a great potential in the digital electronics.Dual-edge triggered (DET) flip-flops came into existence in the place of single edge triggered (SET) flip-flops [16][17][18][19]. As the DET flip-flops achieve the same data rate as of the SET flip-flops at half the clock frequency resulting in low power dissipation in the synchronous logic circuits.…”