Studies on Thermal Atomic Layer Deposition of Silver Thin Films

Mäkelä, Maarit; Hatanpää, Timo; Mizohata, Kenichiro; Meinander, Kristoffer; Niinistö, Jaakko; Räisänen, J.; Ritala, Mikko; Leskelä, Markku

doi:10.1021/acs.chemmater.6b04029

Cited by 41 publications

(24 citation statements)

References 26 publications

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“…Generally, it should be noticed that the size of silver nanoparticles depends on the number of cycles and the substrate type (TNT, TNN), which is illustrated in Figure 10 . The ALD cycles number increase leads to the increase of Ag grains diameter regardless of the substrate type, which is associated with the continued nucleation and nanoparticles coalescence [ 60 , 61 ]. Morphology studies revealed the noticeable influence of the substrate type on the diameter of the deposited Ag grains.…”

Section: Discussionmentioning

confidence: 99%

Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings

et al. 2017

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Plasma enhanced atomic layer deposition (PEALD) of silver nanoparticles on the surface of 1-D titania coatings, such as nanotubes (TNT) and nanoneedles (TNN), has been carried out. The formation of TNT and TNN layers enriched with dispersed silver particles of strictly defined sizes and the estimation of their bioactivity was the aim of our investigations. The structure and the morphology of produced materials were determined using X-ray photoelectron spectroscopy (XPS) and scanning electron miscroscopy (SEM). Their bioactivity and potential usefulness in the modification of implants surface have been estimated on the basis of the fibroblasts adhesion and proliferation assays, and on the basis of the determination of their antibacterial activity. The cumulative silver release profiles have been checked with the use of inductively coupled plasma-mass spectrometry (ICPMS), in order to exclude potential cytotoxicity of silver decorated systems. Among the studied nanocomposite samples, TNT coatings, prepared at 3, 10, 12 V and enriched with silver nanoparticles produced during 25 cycles of PEALD, revealed suitable biointegration properties and may actively counteract the formation of bacterial biofilm.

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Section: Discussionmentioning

confidence: 99%

Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings

et al. 2017

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“…[18][19][20] This chemistry does not extend to Ta metal and TaSix films are produced instead. 21,22 Subsequently, BH3(NHMe2) has been used to deposit Cu and other first row transition metal films [23][24][25] and has also been evaluated for Ag 26 and Au 27 metal ALD, but film growth in all cases is highly substrate dependent. Thus, there is a great need to develop new volatile reducing agents for ALD of these challenging elements and materials.…”

Section: Introductionmentioning

confidence: 99%

Aluminum dihydride complexes and their unexpected application in atomic layer deposition of titanium carbonitride films

2018

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Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD). Highly volatile monomeric complexes AlH2(tBuNCH2CH2NMe2) and AlH2(tBuNCH2CH2NC4H8) are more thermally stable than common Al hydride thin film precursors such as AlH3(NMe3). ALD film growth experiments using TiCl4 and AlH2(tBuNCH2CH2NMe2) produced titanium carbonitride films with a high growth rate of 1.6-2.0 Å per cycle and resistivities around 600 μΩ cm within a very wide ALD window of 220-400 °C. Importantly, film growth proceeded via self-limited surface reactions, which is the hallmark of an ALD process. Root mean square surface roughness was only 1.3% of the film thickness at 300 °C by atomic force microscopy. The films were polycrystalline with low intensity, broad reflections corresponding to the cubic TiN/TiC phase according to grazing incidence X-ray diffraction. Film composition by X-ray photoelectron spectroscopy was approximately TiC0.8N0.5 at 300 °C with small amounts of Al (6 at%), Cl (4 at%) and O (4 at%) impurities. Remarkably, self-limited growth and low Al content was observed in films deposited well above the solid-state thermal decomposition point of AlH2(tBuNCH2CH2NMe2), which is ca. 185 °C. Similar growth rates, resistivities, and film compositions were observed in ALD film growth trials using AlH2(tBuNCH2CH2NC4H8).

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“…ALD can be used to deposit a wide range of materials, such as oxides, nitrides, and pure metals (copper, gold, platinum, etc.) [14]. Since the deposition is controlled by the number of active sites on the surface rather than the amount of precursor in the system, i.e., self-limiting, ALD can produce continuous films with precise thickness and exceptional conformality and uniformity on complex surfaces and structures including trenches and vias with high-aspect ratio.…”

Section: Figure 22 a Schematic Of An Ald Cyclementioning

confidence: 99%

Area Selective Chemical Vapor Deposition of Metallic Films using Plasma Electrons as Reducing Agents

Nadhom

2021

Linköping Studies in Science and Technology. Dissertations

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Metallic films are used to improve optical, chemical, mechanical, magnetic, and electrical properties and are therefore of high importance in many applications, from electronics and catalysis, environmental protection and health, to wearable and flexible electronic materials.Many of these applications, however, require that the metal films are deposited uniformly on topographically complex surfaces and structures. Some form of chemical vapor deposition (CVD) where the deposition is governed by the surface chemistry is needed for uniform film deposition on topographically complex surfaces. Furthermore, area selective deposition (ASD) has gained large considerations lately, where films deposited only on specified areas of the substrate, and not on others, simplifies the processing significantly and opens the way for less complex fabrication of, for instance, nanoscaled electronics. ASD occurs when the surface chemical reactions are disabled on selected areas of the substrate. Since the metal centers in CVD precursor molecules typically have a positive valence, a reductive surface chemistry is required to form a metallic film. This is usually done by using a second precursor, i.e., a molecular reducing agent. The negative standard reduction potential of the first-row transition metals (Ti, V, Cr, Mn, Fe, Co, and Ni) means that CVD of these metals requires either very high temperatures or very powerful molecular reducing agents. This thesis describes a new low X XI List of Articles

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Studies on Thermal Atomic Layer Deposition of Silver Thin Films

Cited by 41 publications

References 26 publications

Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings

Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings

Aluminum dihydride complexes and their unexpected application in atomic layer deposition of titanium carbonitride films

Area Selective Chemical Vapor Deposition of Metallic Films using Plasma Electrons as Reducing Agents

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