Studies on the characteristics of GaN-based Gunn diode for THz signal generation

Панда, А. К.; Dash, G. N.; Agrawal, Naresh; Parida, R.K.

doi:10.1109/apmc.2009.5384399

Cited by 5 publications

(2 citation statements)

References 15 publications

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“…The method of determination of efficiency for the Gunn diode is as described in Section 2 and Ref. [5]. Thus, to analyze the characteristics of Gunn and IMPATT diodes, the electric field curves at different positions (for IMPATT from the p-end and for Gunn from the cathode end) are drawn and are shown in Fig.…”

Section: Comparative Results and Discussionmentioning

confidence: 99%

GaN based transfer electron and avalanche transit time devices

Parida

Панда

2012

J. Semicond.

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A new model is developed to study the microwave/mm wave characteristics of two-terminal GaNbased transfer electron devices (TEDs), namely a Gunn diode and an impact avalanche transit time (IMPATT) device. Microwave characteristics such as device efficiency and the microwave power generated are computed and compared at D-band (140 GHz center frequency) to see the potentiality of each device under the same operating conditions. It is seen that GaN-based IMPATT devices surpass the Gunn diode in the said frequency region.

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Section: Comparative Results and Discussionmentioning

confidence: 99%

GaN based transfer electron and avalanche transit time devices

Parida

Панда

2012

J. Semicond.

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“…The performances of GaN-based Gunn diodes have been studied extensively for more than two decades, in particular, theoretical predictions using various methods including the Monte Carlo (MC) model, Negative Differential Mobility model, and Hydrodynamic model. As a shorter device is expected to operate at a higher frequency, many studies were carried out for devices in the micron to submicron range [3][4][5][6][7][8][9][10][11][12][13][14][15]; the reported Gunn diode with the shortest transit length is 400 nm [11]. The fundamental operating frequency of these GaN Gunn diodes varied from 87 GHz * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo evaluation of GaN THz Gunn diodes

Lee

Ong

Choo

et al. 2021

Semicond. Sci. Technol.

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The performances of GaN-based Gunn diodes have been studied extensively for more than two decades, however, the diverging electron drift velocity characteristics employed in these studies merit a review of the potential of GaN Gunn diodes as THz sources. A self-consistent analytical-band Monte Carlo (MC) model capable of reproducing the electron drift velocity characteristics of GaN predicted theoretically by the first-principles full band MC model is used in this work to evaluate systematically the performance of GaN Gunn diodes in transit time mode. The optimal fundamental frequency of a sustainable current oscillation under a DC bias is determined as a function of the length of its transit region. The MC model predicts a GaN Gunn diode with a transit length of 500 nm capable of operating at frequencies up to 625 GHz with an estimated output power of 3.0 W. An MC model takes into account the effect of defects in order to replicate the much lower electron drift velocity characteristics derived from experimental work and predicts THz signal generation of 2.5 W at highest sustainable operating frequency of 326 GHz in a Gunn diode with a transit length of 700 nm.

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GaN Multipliers

Jia

Pavlidis

2021

Fundamentals of Terahertz Devices and Applications

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Studies on the characteristics of GaN-based Gunn diode for THz signal generation

Cited by 5 publications

References 15 publications

GaN based transfer electron and avalanche transit time devices

GaN based transfer electron and avalanche transit time devices

Monte Carlo evaluation of GaN THz Gunn diodes

GaN Multipliers

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