Studies on structural, optical and electrical properties of boron doped zinc oxide films prepared by spray pyrolysis technique

Lokhande, B. J.; Patil, Pramod S.; Uplane, M. D.

doi:10.1016/s0921-4526(01)00405-7

Cited by 94 publications

(42 citation statements)

References 15 publications

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“…B doped ZnO films can be deposited by several methods such as metal organic chemical vapor deposition [16,17], DC sputtering [18], pulsed laser deposition (PLD) [19], chemical vapor deposition technique [20], spray pyrolysis [21,22], vacuum arc plasma evaporation [23], and sol gel [24,25]. Among these methods, the sol gel method is one of the most commonly used method for preparation of transparent and conducting oxides owing to its simplicity, safety, non-vacuum system of deposition and hence inexpensive method for large area coatings.…”

Section: Introductionmentioning

confidence: 99%

The role of pH and boron doping on the characteristics of sol gel derived ZnO films

Ilıcan

Yakuphanoğlu

Çağlar

et al. 2011

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

The role of pH and boron doping on the characteristics of sol gel derived ZnO films

Ilıcan

Yakuphanoğlu

Çağlar

et al. 2011

Journal of Alloys and Compounds

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“…Compared to undoped ZnO, impurity-doped ZnO has a lower resistivity and a better thermal stability. With this aim zinc oxide has been doped with Al [4], Ga [5], In, B [6], Si, Ge, Ti, Zr, as well as Hf [7], and F [8]. The resulting minimal resistivity was about 10 -4 Ω·cm [5,8].…”

mentioning

confidence: 99%

Study of annealing influence on electrical and morphological properties of ZnO:Ga thin films

Khranovskyy

Großner

Lasorenko

et al. 2006

Phys. Status Solidi (c)

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In this study, the influence of thermal annealing in different ambients on the electrical and morphological properties of Ga-doped ZnO films with 1wt.% gallium acetylacetonate in the precursor mix is investigated systematically. As-grown samples were prepared on c-plane Al 2 O 3 by PEMOCVD with a substrate temperature of 300 o C and possess a resistivity of about 10 -2 Ω·cm. The annealing was realized in isochronal steps between 300 to 1000 o C for 1 hour in argon and air ambient, respectively. The resistivity of the films was found to be dependent on the annealing atmosphere. During annealing in air, the resisitivity increases monotically with an abrupt reduction at 800 o C, whereas the annealing in argon does not induce significant changes but results in two clear minima at 300 o C and 800 o C. These effects are explained with crystal improvement at low temperature (300 o C) and successive dopant activation at higher temperature (800 o C). Furthermore, an anomalous surface flattening at 800 o C was observed. The obtained results suggest that the annealing procedure does allow to decrease the resistivity and roughness of as-grown ZnO:Ga films, what would be beneficial for the application of PEMOCVD-grown ZnO thin films for the formation of abrupt junctions in p-n device structures.

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“…It is widely used in varistors [2], gas sensors [1], in the form of films [3][4][5][6], piezoelectric transducers [7] and transparent electrodes for solar cells [8], due to its unique properties. The ntype electrical conductivity of undoped ZnO results from deviations from stoichiometry in the form of interstitial zinc atoms and/or oxygen vacancies.…”

Section: Introductionmentioning

confidence: 99%

Grain growth kinetics for B2O3-doped ZnO ceramics

Yüksel

Özkan

2015

Materials Science-Poland

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Grain growth kinetics in 0.1 to 2 mol % B 2 O 3 -added ZnO ceramics was studied by using a simplified phenomenological grain growth kinetics equation G n = K 0 ·t·exp(−Q/RT) together with the physical properties of sintered samples. The samples, prepared by conventional ceramics processing techniques, were sintered at temperatures between 1050 to 1250°C for 1, 2, 3, 5 and 10 hours in air. The kinetic grain growth exponent value (n) and the activation energy for the grain growth of the 0.1 mol % B 2 O 3 -doped ZnO ceramics were found to be 2.8 and 332 kJ/mol, respectively. By increasing B 2 O 3 content to 1 mol %, the grain growth exponent value (n) and the activation energy decreased to 2 and 238 kJ/mol, respectively. The XRD study revealed the presence of a second phase, Zn 3 B 2 O 6 formed when the B 2 O 3 content was 1 mol %. The formation of Zn 3 B 2 O 6 phase gave rise to an increase of the grain growth kinetic exponent and the grain growth activation energy. The kinetic grain growth exponent value (n) and the activation energy for the grain growth of the 2 mol % B 2 O 3 -doped ZnO ceramics were found to be 3 and 307 kJ/mol, respectively. This can be attributed to the second particle drag (pinning) mechanism in the liquid phase sintering.

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Studies on structural, optical and electrical properties of boron doped zinc oxide films prepared by spray pyrolysis technique

Cited by 94 publications

References 15 publications

The role of pH and boron doping on the characteristics of sol gel derived ZnO films

The role of pH and boron doping on the characteristics of sol gel derived ZnO films

Study of annealing influence on electrical and morphological properties of ZnO:Ga thin films

Grain growth kinetics for B2O3-doped ZnO ceramics

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