2000
DOI: 10.1016/s0924-4247(99)00246-0
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Studies on SiO2–SiO2 bonding with hydrofluoric acid. Room temperature and low stress bonding technique for MEMS

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Cited by 67 publications
(29 citation statements)
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“…Quartz microchip is generally difficult to fabricate due to the requirement of high temperature (over 10007C) or high pressure in the bonding process [28][29][30]. We developed a multi-point pressure approach for quartz microchip bonding at normal temperature and no high-pressure equipment needed.…”
Section: Multi-point Pressure Bonding Approachmentioning
confidence: 99%
“…Quartz microchip is generally difficult to fabricate due to the requirement of high temperature (over 10007C) or high pressure in the bonding process [28][29][30]. We developed a multi-point pressure approach for quartz microchip bonding at normal temperature and no high-pressure equipment needed.…”
Section: Multi-point Pressure Bonding Approachmentioning
confidence: 99%
“…One mm diameter holes for the reservoirs and wastes, which were also utilized as electrical contact points, were made on a cover plate (0.5 mm thick) by ultrasonic drilling. This cover plate was press-bonded for 24 h via 1% HF dipping [23]. Typical width and depth of the micro channel is 50 mm and 20 mm, respectively.…”
Section: Chip Fabricationmentioning
confidence: 99%
“…• C) for inorganic materials bonding, such as plasma activation, 4-6 wet chemistry, 7 or combination of these processes. 8,9 Recently, silane coupling reagents have been widely used to enhance the adhesion between plasma-activated thermoplastics and PDMS hybrid microfluidic devices.…”
mentioning
confidence: 99%