Studies on gas release from pre-saturated samples on a plasma beam installation

Tulenbergenov, Timur; Kulsartov, T.; Соколов, И. А.; Rakhadilov, Bauyrzhan; Ganovichev, D. A.; Miniyazov, A.J.; Ситников, А. А.

doi:10.26577/phst-2017-2-130

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…The electromagnetic system, which consists of coils, creates a longitudinal magnetic field in the discharge chamber. The geometric parameters of the plasma beam were controlled using an electromagnetic system [12].…”

Section: Methodsmentioning

confidence: 99%

Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix

Iskakova

2022

Journal of Nanomaterials

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In the plasma state, a polar semiconductor gallium arsenide (GaAs) is deposited on a nonpolar silicon (Si) matrix in the <111> direction. Further qualitative and quantitative analyzes were carried out with the resulting GaAs/Si structure on a plasma-beam device. We have chosen the optimal characteristics of this pulsed method for the deposition of GaAs from a plasma onto silicon (Si) created by a powerful ion beam. The optimal modes of the effect of temperature, electric field, and interval of pulse action on GaAs/Si quantum-well heteronanostructures were considered. In the implementation of application of this structure in applied works related to opto- and nanoelectronics, active elements of solar cells require defect-free compositions with ideal geometric parameters. Based on these experiments, the optimal mode of plasma influence on the formation of nanoclusters on the surface of the irradiated sample was chosen. SEM, EDS, and X-ray diffraction analysis methods were used to determine such parameters as the structure, microhardness, phase and elemental composition of the irradiated Si silicon surface, as well as the penetration depth of GaAs deposited on a single-crystal matrix. This work presents an experimental implementation of preparation of a gallium arsenide nanolayer and an applied theoretical analysis of the GaAs/Si heteronanostructure. We deposited gallium arsenide compounds from the plasma state on the surface of a silica crystal and studied the resulting structure by physicochemical methods.

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Section: Methodsmentioning

confidence: 99%

Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix

Iskakova

2022

Journal of Nanomaterials

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“…In addition, a large number of micro cracks are created in the volume of tungsten. It is assumed that they are directed from the surface into the depth of the metal, as well as the cause of the occurrence of these structural disorders are mechanical stresses in the tungsten lattice caused by implanted helium [14]. Figure 6 shows SEM-images of the surface of beryllium samples before (Fig.6, a) and after irradiation in helium (Fig.6, b), hydrogen (Fig.6, c) and deuterium ( Fig.6, d).…”

Section: The Change In Surface W When Irradiated By a Plasma Beammentioning

confidence: 99%

Plasma Installation for Research of Plasma-Surface Interaction

Rakhadilov¹,

Skakov²,

Tulenbergenov³

et al. 2019

Eurasian phys. tech. j.

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This work describes some of the features of the developed plasma setup for studying surfaceplasma interactions. Results of the study of the interaction of tungsten and beryllium with plasma are presented. This facility is intended for testing materials and equipment of the Kazakhstan Materials Science Tokomak and for conducting a study of plasma-surface interactions. The main elements of a plasma installation are an electron beam gun, a plasma-beam discharge chamber, a vacuum interaction chamber, a cooled target device, an electromagnetic system consisting of electromagnetic coils, a lock device for quick changing and moving diagnostic tools or irradiated samples without depressurization of the installation. Experiments to study changes in the structure of tungsten and beryllium during plasma exposure have shown that after irradiation, the surface is subjected to erosion and pores form on the surface.

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Studies on gas release from pre-saturated samples on a plasma beam installation

Cited by 2 publications

References 7 publications

Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix

Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix

Plasma Installation for Research of Plasma-Surface Interaction

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