Studies on electrical properties of Fe doped ZnO nanostructured oxides synthesized by sol–gel method

Lehru, Rujuta; Radhanpura, Jaydeep; Kumar, Ramesh; Zala, Divyarajsinh; Vadgama, V.S.; Dadhich, Himanshu; Rathod, Vishal; Trivedi, Rashmi; Pandya, D.D.; Shah, N.A.; Solanki, P.S.

doi:10.1016/j.ssc.2021.114415

Cited by 19 publications

(8 citation statements)

References 39 publications

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“…These bonds are non-collinear and rotate more easily, thus enhancing the dielectric response of the layer. 50 The present results suggest that dipolar polarization is stronger in Fe-doped ZnO. Another mechanism that can substantially increase polarization is the charge build-up and polarization at grain boundaries and/or heterointerfaces (also known as Maxwell–Wagner polarization).…”

Section: Resultsmentioning

confidence: 49%

“…We suggest that the substitution of dopant ions at Zn sites results in Fe–O (Ni–O) bond formation. These bonds are non-collinear and rotate more easily, thus enhancing the dielectric response of the layer . The present results suggest that dipolar polarization is stronger in Fe-doped ZnO.…”

Section: Resultsmentioning

confidence: 63%

“…The most likely polarization mechanism, which adds to the net polarizability in the range 10 3 −10 5 Hz, is the orientation (dipolar) polarization. 49 We suggest that the 50 The present results suggest that dipolar polarization is stronger in Fe-doped ZnO. Another mechanism that can substantially increase polarization is the charge build-up and polarization at grain boundaries and/or heterointerfaces (also known as Maxwell−Wagner polarization).…”

Section: X-ray Diffraction Analysismentioning

confidence: 66%

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Magneto-Optical and Muliferroic Properties of Transition-Metal (Fe, Co, or Ni)-Doped ZnO Layers Deposited by ALD

et al. 2022

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ZnO doped with transition metals (Co, Fe, or Ni) that have non-compensated electron spins attracts particular interest as it can induce various magnetic phenomena and behaviors. The advanced atomic layer deposition (ALD) technique makes it possible to obtain very thin layers of doped ZnO with controllable thicknesses and compositions that are compatible with the main microelectronic technologies, which further boosts the interest. The present study provides an extended analysis of the magneto-optical MO Kerr effect and the dielectric properties of (Co, Fe, or Ni)-doped ZnO films prepared by ALD. The structural, magneto-optical, and dielectric properties were considered in relation to the technological details of the ALD process and the corresponding dopant effects. All doped samples show a strong MO Kerr behavior with a substantial magnetization response and very high values of the Kerr polarization angle, especially in the case of ZnO/Fe. In addition, the results give evidence that Fe-doped ZnO also demonstrates a ferroelectric behavior. In this context, the observed rich and versatile physical nature and functionality open up new prospects for the application of these nanostructured materials in advanced electronic, spintronic, and optical devices.

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Section: Resultsmentioning

confidence: 49%

Section: Resultsmentioning

confidence: 63%

Section: X-ray Diffraction Analysismentioning

confidence: 66%

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Magneto-Optical and Muliferroic Properties of Transition-Metal (Fe, Co, or Ni)-Doped ZnO Layers Deposited by ALD

et al. 2022

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“…Substitution of Fe at Zn sites results in a formation of Fe-O bonds. These bonds are non-collinear and rotate more easily thus enhancing the dielectric response of the layer [12]. The shape of the curve for Ni:ZnO film implies that there is another polarization mechanism which gives rise to the significant increase of εr at f = 10 3 -10 4 Hz.…”

Section: Resultsmentioning

confidence: 99%

Electric characterization of transition metal (Co, Ni, Fe) doped ZnO thin layers prepared by atomic layer deposition

Spassov

Paskaleva

Blagoev

et al. 2023

J. Phys.: Conf. Ser.

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Doping of ZnO with different ions enables efficient control of its optical, electrical and magnetic properties. ZnO thin films doped with 3d transition metals have potential to be used as diluted magnetic semiconductors. In this work, dielectric and electrical properties of transition metal (Ni-, Co- or Fe-) doped ZnO thin films prepared by atomic layer deposition (ALD) have been studied. Standard capacitance-voltage (C-V) and current-voltage (I-V) as well as capacitance-frequency (C-f) characteristics have been measured. Some important parameters, e.g. the concentration of majority carriers N D, barrier height Ф b as well as the built-in potential Vbi are determined. Different polarization effects are considered to explain the strong frequency dependence of dielectric constant.

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“…In their study, 21 it was evidenced that the higher concentration of CdO was expected to be responsible for amorphous phases, whereas higher concentration of V 2 O 5 led to crystalline phases. R. Lehru et al 22 investigated the dielectric characteristics of Fe-doped ZnO binary system. In this study, 22 they revealed that as the concentration of Fe increased, the dielectric constant (εʹ), dielectric loss factor (ε″), tangent of dielectric loss (tanδ) and AC conductivity were found to decrease.…”

mentioning

confidence: 99%

Dielectric Relaxation and AC Conductivity of Fe-Doped Glassy Semiconductors: Role of Fe Doping on Relaxation Time

Ghosh,

Ali,

Bhattacharya

2024

ECS J. Solid State Sci. Technol.

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AC conductivity and dielectric parameters are supposed to be two noticeable parameters that ensure the applicability of present samples for electronic and other applications. Presently, Fe-doped glassy semiconductors were developed and characterized using Fourier-transform infrared spectroscopy, scanning electron microscopy, energy-dispersive X-ray analsysis, and decoupling index for structural, morphological, and elemental examinations. Frequency-dependent dielectric constant, AC conductivity, and dielectric loss have been explored in a wide frequency and temperatures ranges. Electric modulus formalism has been conceived as it can exclude the electrode polarization effect at low-frequency regimes and suggest the transition from long-range mobility to short-range mobility assembly of polarons. It is also noteworthy that relaxation times are found to decrease with temperatures, which may indicate something about the faster movement of charge carriers. The variation of KWW parameters directly indicate that after doping of Fe content into the resultant materials, the relaxation process is shifted from Non-Debye to Debye type up to a limit.

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Studies on electrical properties of Fe doped ZnO nanostructured oxides synthesized by sol–gel method

Cited by 19 publications

References 39 publications

Magneto-Optical and Muliferroic Properties of Transition-Metal (Fe, Co, or Ni)-Doped ZnO Layers Deposited by ALD

Magneto-Optical and Muliferroic Properties of Transition-Metal (Fe, Co, or Ni)-Doped ZnO Layers Deposited by ALD

Electric characterization of transition metal (Co, Ni, Fe) doped ZnO thin layers prepared by atomic layer deposition

Dielectric Relaxation and AC Conductivity of Fe-Doped Glassy Semiconductors: Role of Fe Doping on Relaxation Time

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