Studies on chemically synthesized PbS thin films for IR detector application

Rohom, Ashwini B.; Londhe, Priyanka U.; Jadhav, Priya R.; Bhand, Ganesh R.; Chaure, Nandu B.

doi:10.1007/s10854-017-7637-4

Cited by 21 publications

(11 citation statements)

References 23 publications

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“…Further, it is one of the oldest and most common detection materials in various infrared detectors. It functions as a photon detector, responding directly to the photons of radiation, as opposed to thermal detectors [3,4]. The large Bohr radius of 18 nm of the material leads to the observation of quantum confinement effects, a desirable property in the field of Dye Sensitized Solar Cells (DSSC) [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of Deposition Time on Structural and Optoelectronic Properties of Flower-Like Nanostructured PbS Thin Films

Sheeba¹,

Namitha²,

Ramsiya³

et al. 2021

J. Sci. Res.

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Polycrystalline nanostructured PbS thin ﬁlms are deposited onto soda-lime glass substrates by the method of chemical bath deposition (CBD) at different duration of deposition time. The structure and surface morphology of the ﬁlms are characterized by X-ray diﬀraction (XRD) and field effect scanning electron microscopy (FE-SEM). XRD pattern exhibits polycrystalline structure with preferential orientation along (200) direction, parameters such as crystallite size, lattice constant, lattice-strain and dislocation density are calculated. The FE-SEM images show appearance of flower like structure on formation of PbS films which is indicative of suitability in gas sensing applications. Studies on optical properties carried out by UV-Vis spectroscopy measurements show bandgap in the range 1.65eV – 1.41eV. The photoluminescence spectra of the films exhibit two peaks centered at around 613 nm and 738 nm after excitation at 450 nm. Electrical studies from Hall measurements indicate the carrier concentration and mobility of the PbS samples corroborate the variations in the conductivity.

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Section: Introductionmentioning

confidence: 99%

Effect of Deposition Time on Structural and Optoelectronic Properties of Flower-Like Nanostructured PbS Thin Films

Sheeba¹,

Namitha²,

Ramsiya³

et al. 2021

J. Sci. Res.

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“…At the same time, the intensity of PbS (200) plane significantly decreases with increasing temperatures, indicating a degeneration of the crystal quality of PbS matrix material and orientation. This is attributed to more severe stoichiometric deviation, which results from the easier escape of the S element under higher temperature . This is further confirmed by a higher Pb/S element atomic ratio from the EDS spectrum for the sensitized PbS films at 400 °C, which is shown in the Supporting Information, Figure S3.…”

Section: Results and Discussionmentioning

confidence: 52%

Wafer-Scale High-Detectivity Near-Infrared PbS Detectors Fabricated from Vapor Phase Deposition

Zhang

Liu

et al. 2023

J. Phys. Chem. C

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The commercialization of uncooled lead-salt photoconductive (PbX PC) detectors has been restricted by the low-yield of standard chemical bath deposition (CBD) manufacturing technology. As an iterative solution, herein, a novel vapor phase deposition (VPD) route is demonstrated by fabricating the 3 in. wafer-scale uniform PbS sensitized films with high detectivity. The morphological evolution suggests that the self-assembled rod-like microstructure, which is dominated by the I2/PbS flux ratio in the VPD process, is the key to triggering the near-infrared (NIR, 1–3 μm) response of the PbS-sensitized films. The maximum peak detectivity of VPD-PbS NIR detector of 1.9 × 1011 cm Hz1/2 W–1 is achieved after optimizing the sensitization-condition dependence of PbS detector’s performance. The high performance of wafer-scale VPD-PbS PC detectors, which attains the same performance as standard CBD-PbS detectors, manifests that the VPD technology opens up a new avenue to the industrialization of uncooled lead-salt PC detectors.

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“…Most often, PbS thin films have been deposited by various chemical techniques, including Chemical Bath Deposition (CBD) [ 14 ], Successive Ionic Layer Adsorption and Reaction (SILAR) [ 15 ], electrodeposition [ 16 ], and spray pyrolysis method [ 17 ]. The popularity of chemical deposition techniques is due to their low cost and ease of implementation even if the final quality of the PbS films is not always optimal and the optoelectronic performance of their associated devices is poor [ 18 , 19 ]. On the other hand, physical vapor deposition (PVD) techniques (including sputtering [ 20 , 21 ], thermal evaporation [ 22 ], atomic layer deposition [ 23 ], or pulsed laser deposition (PLD) [ 24 , 25 , 26 ]) have been used to deposit PbS thin films onto different substrates.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Helium Background Gas Pressure on the Structural and Optoelectronic Properties of Pulsed-Laser-Deposited PbS Thin Films

et al. 2021

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This work focuses on the dependence of the features of PbS films deposited by pulsed laser deposition (PLD) subsequent to the variation of the background pressure of helium (PHe). The morphology of the PLD-PbS films changes from a densely packed and almost featureless structure to a columnar and porous one as the He pressure increases. The average crystallite size related to the (111) preferred orientation increases up to 20 nm for PHe ≥ 300 mTorr. The (111) lattice parameter continuously decreases with increasing PHe values and stabilizes at PHe ≥ 300 mTorr. A downshift transition of the Raman peak of the main phonon (1LO) occurs from PHe = 300 mTorr. This transition would result from electron–LO–phonon interaction and from a lattice contraction. The optical bandgap of the films increases from 1.4 to 1.85 eV as PHe increases from 50 to 500 mTorr. The electrical resistivity of PLD-PbS is increased with PHe and reached its maximum value of 20 Ω·cm at PHe = 300 mTorr (400 times higher than 50 mTorr), which is probably due to the increasing porosity of the films. PHe = 300 mTorr is pointed out as a transitional pressure for the structural and optoelectronic properties of PLD-PbS films.

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Studies on chemically synthesized PbS thin films for IR detector application

Cited by 21 publications

References 23 publications

Effect of Deposition Time on Structural and Optoelectronic Properties of Flower-Like Nanostructured PbS Thin Films

Effect of Deposition Time on Structural and Optoelectronic Properties of Flower-Like Nanostructured PbS Thin Films

Wafer-Scale High-Detectivity Near-Infrared PbS Detectors Fabricated from Vapor Phase Deposition

Effect of the Helium Background Gas Pressure on the Structural and Optoelectronic Properties of Pulsed-Laser-Deposited PbS Thin Films

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