Group II-VI elements of the periodic table are suitable for electronic and optoelectronic applications. Cadmium selenide (CdSe) and cadmium telluride (CdTe) bilayer films were deposited onto well-cleaned glass substrates using vacuum evaporation technique. These films were analyzed using X-ray diffraction, field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDAX) and UV-visible spectrophotometry to study their microstructural, morphological and optical properties. Crystallinity of CdSe film increased with increase in film thickness, which in turn favored the crystallinity of the CdTe layer deposited over CdSe. The CdTe/CdSe bilayer showed globular surface morphology, and the grain size of the films measured by FE-SEM micrographs range from 16 to 31 nm. EDAX analysis confirmed the presence of cadmium (Cd), selenium (Se) and tellurium (Te). Two electronic transitions were observed in the optical band gap of the CdTe/CdSe bilayer whose energy levels lie in between the energy band gap of the bulk CdTe and CdSe semiconductors. These electronic transitions are mainly due to the spin orbit split of valence band energy levels.
IntroductionEco-friendly electricity-generation techniques, such as solar, geothermal and wind energy, are being used increasingly due to depleting levels of fossil fuels and environmental crises. Solar energy is the main source of eco-friendly electricity and has been used for several decades. Solar cells utilize bulk silicon (Si), and the production cost of Si is high. Hybrid solar cells utilize cadmium (Cd)-based binary compounds such as cadmium selenide (CdSe) and cadmium telluride (CdTe) due to their high absorption coefficients which envelop wider range of visible spectrum compared to Si solar cells. CdSe and CdTe are highly photosensitive and direct optical band gap materials (1·74 and 1·45 eV, respectively), which render them promising for usage in photovoltaic devices.1 Beside these applications, CdSe and CdTe have also gained importance in optoelectronic applications over recent decades. CdSe and CdTe are being used as the window and absorber layer, respectively, in photovoltaic devices.2 Additionally, CdTe and CdSe are used in various other devices, such as thin film transistors, solar cell-based devices, photoconductors, gas sensors, acousto-optical devices and photographic photoreceptors, 3 and also in antibacterial applications. Yadav et al. 1 and Cristian et al. 3 deposited CdSe using spray pyrolysis and thermal evaporation and studied the influence of the preparation condition on the structural and optical properties of the CdSe films. They also showed that the resistivity of the films exhibited semiconductor behavior and the band gap ranges from 1·65 to 1·75 eV for increasing substrate temperature and the speed of substrate rotation during deposition. Melvin David Kumar and Suganthi 5 prepared a CdTe/CdSe multilayer using the thermal evaporation technique and studied its structural and electrical properties. Dutta and Saikia 6 deposited a CdS, C...