Studies of ZnTe back contacts to CdS/CdTe solar cells

Gessert, T. A.; Sheldon, P.; Li, X.; Dunlavy, D. J.; Niles, David W.; Sasala, R.; Albright, S.P.; Zadler, B.

doi:10.1109/pvsc.1997.654117

Cited by 17 publications

(13 citation statements)

References 5 publications

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“…The outer metallization was deposited using d.c. magnetron sputtering to a thickness of ~0.5 µm. Additional experimental details are provided elsewhere (7). Two different contact metals, Ni and Ti, were studied.…”

Section: Methodsmentioning

confidence: 99%

“…Studies on crystalline materials have indicated small valence-band offsets for ZnTe/CdTe (5), and p-type doping of polycrystalline ZnTe with Cu has been demonstrated to >10 18 cm -3 (6). Although ZnTe contacts have demonstrated reasonable success and stability (7), the use of Cu in back contacts of CdTe/CdS thinfilm devices has been a subject of considerable debate. Cu has been linked to enhanced device performance by reducing series resistance and increasing open-circuit voltage.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of Cu diffusion in ZnTe-based contacts for thin-film CdS/CdTe solar cells

Narayanswamy

Gessert

Asher

1999

AIP Conference Proceedings

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Abstract. Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Ni metallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100°C to 300°C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cu at the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analysis of Cu diffusion in ZnTe-based contacts for thin-film CdS/CdTe solar cells

Narayanswamy

Gessert

Asher

1999

AIP Conference Proceedings

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“…Commonly used buffer layer/metallization combinations are Cu/Au, 154,155 Cu/graphite 156 or graphite pastes doped with Hg and Cu, 2 ZnTe doped with Cu [157][158][159] and Au or Ni metallization, Cu/Mo. 160 Alternatively, Cufree back contacts such as Ni:P, ZnTe, 161 Au 162 or Sb 2 Te 3 /Ni 163 contacts have also been investigated.…”

Section: Cdtementioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

354

192

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Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties and n‐type wide‐bandgap partner layers to form the p–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.

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“…The most commonly investigated back contact combinations so far are Cu/Au [2], Cu/graphite [3], Cu-doped ZnTe with Au or Ni metallization [3,4], Cu/Mo [5]. Cu-based contacts give high efficiency; but Cu diffuses along the grain boundaries and across the junction.…”

Section: Introductionmentioning

confidence: 99%