Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations

Chen, Ying-Chuan; Chao, Yu-Ting; Chen, Edward; Wu, Chao-Hsin; Wu, Yuh-Renn

doi:10.1103/physrevmaterials.7.094001

Phys. Rev. Materials

2023

DOI: 10.1103/physrevmaterials.7.094001

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Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations

Ying-Chuan Chen,

Yu-Ting Chao,

Edward Chen

et al.

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Enhancing simulation feasibility for multi-layer 2D MoS₂ RRAM devices: reliability performance learnings from a passive network model

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2024

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Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations

Cited by 2 publications

References 36 publications

Enhancing simulation feasibility for multi-layer 2D MoS₂ RRAM devices: reliability performance learnings from a passive network model

Enhancing simulation feasibility for multi-layer 2D MoS₂ RRAM devices: reliability performance learnings from a passive network model

Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors

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Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations

Cited by 2 publications

References 36 publications

Enhancing simulation feasibility for multi-layer 2D MoS2 RRAM devices: reliability performance learnings from a passive network model

Enhancing simulation feasibility for multi-layer 2D MoS2 RRAM devices: reliability performance learnings from a passive network model

Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors

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Product

Resources

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Enhancing simulation feasibility for multi-layer 2D MoS₂ RRAM devices: reliability performance learnings from a passive network model

Enhancing simulation feasibility for multi-layer 2D MoS₂ RRAM devices: reliability performance learnings from a passive network model