Studies of surface voltage and current transients in solar cells for accurate evaluation of minority carrier lifetime

Vishnoi, Arti; Gopal, R.; Dwivedi, R.; Srivastava, Shikha

doi:10.1016/0038-1101(89)90043-9

Cited by 5 publications

(3 citation statements)

References 22 publications

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“…The excess carrier concentration in cell number 1 is given by n=nPoexP() . (7) A generation function as given by eq.2 can be realized in the numerical model by a start concentration above the equilibrium level n,, in the surface cell. Different generation profiles, which are necessary for greater wavelength ofillumination, can be taken into account by an adequate start amounts for all cells up to penetration depth.…”

Section: Computer Calculation For Modelingmentioning

confidence: 99%

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<title>Dynamic analysis of solar elements</title>

Keßler

Hauenschild

1993

SPIE Proceedings

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Analysis of the dynamic time response of a solar element or other photovoltaic devices after a pulse illumination gives more details of microphysical processes and inherent parameters. By means of different types of investigations one can separate diffusion and lifetime effects. Using different wavelength of irradiation, the influence of back side contact effects is to analyse with respect to the optical and recombination properties. Because the capacitance of the depletion layer and the concentration of acceptors is included into the registrated voltage decay, both parameters can also be determined.Measurements were made by using excimer laser radiation of 308 nm wavelength and 10 ns duration or dye laser radiation within a spectral range from 500 nm to 700 nm. The available radiation flux density was in a range from 10 mW/cm2 to 100 W/cm2. The irradiation was applied at front or rear side of commercial solar cells. Mono and poly crystaline material were investigated. The transient responses in short circuit current and open circuit voltage was registrated with a high speed DSO.For analysing the physical processes, a numerical simulation of the cell has been developed. This modeling allows to study the fundamental effects and their time evolution step by step. Values for different parameters can be obtained by a mathematical fitting procedure. The results of various samples will be shown and discussed.

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Section: Computer Calculation For Modelingmentioning

confidence: 99%

“…. [7]. In most experiments, current ramps were applied to the sample to produce the transient behavior.…”

Section: Introductionmentioning

confidence: 99%

<title>Dynamic analysis of solar elements</title>

Keßler

Hauenschild

1993

SPIE Proceedings

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“…The light induced short-circuit current decay [7,8] and open-circuit voltage decay [9][10][11] have been studied quite extensively by many workers for crystalline semiconductors and a combination of two can give both the bulk lifetime and surface recombination velocity [12][13][14]. However, not much work has been done on amorphous semiconductor solar cells because of complications involved in the interpretation.…”

Section: Introductionmentioning

confidence: 99%

Intensity Dependent Transient Response of Amorphous Photodiode and Solar Cell

Smrity

2022

DDF

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The study of amorphous semiconductors is of great interest because they find important applications in many electronic devices, like large area solar cells and photosensors. We have developed a methodology for the analysis of transient response of amorphous photodiodes when switched off from steady-state and when they are exposed to a δ pulse of light. For this purpose continuity equations and the transit time effect have been calculated. For the p-i-n photodiodes, characteristics of photo current decay have been analyzed for an ideal case in which the diode is assumed to have a unit current gain. It is found that characteristics either due to decay from steady-state or due to light pulse excitation is transit time dominated. The short-circuit performance of solar cells resembles to a p-i-n diode because a solar cell is essentially a p-i-n diode which is used as an energy converter. Thus short circuit current decay of solar cells behaves similar to the photocurrent decay of the diode and the same method of analysis can be applied.

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