Studies of structures elaborated by focused ion beam induced deposition

Prestigiacomo, M.; Roussel, Luc; Houel, A.; Sudraud, P.; Bedu, F.; Tonneau, D.; Safarov, V. I.; Dallaporta, H.

doi:10.1016/j.mee.2004.07.047

Cited by 26 publications

(18 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When using the GIS, milling and deposition processes are in competition [4], so the deposition process parameters (FIB beam current, scan speed and gas flow) have to be optimized.…”

Section: Methodsmentioning

confidence: 99%

“…The Pt contacts fabricated to nanodevices revealed ohmic behaviour and good stability as a function of time and applied current [1]. The W nanowires display an ohmic behaviour, low resistance, (only 20 times higher than the bulk) and a good stability [4]. Comparing the EB and FIB techniques the resistance of the EB deposited Pt nanowires was quite high in the as-deposited state and increased drastically when cooled down [5], while the resistance of the FIB deposited ones showed only a weak temperature dependence.…”

Section: Introductionmentioning

confidence: 98%

“…The electrical properties of Pt and W wires deposited by FIB were also studied [1,4]. The Pt contacts fabricated to nanodevices revealed ohmic behaviour and good stability as a function of time and applied current [1].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Morphological and electrical study of FIB deposited amorphous W nanowires

Horváth

Neumann

Tóth

et al. 2007

Microelectronic Engineering

View full text Add to dashboard Cite

“…When using the GIS, milling and deposition processes are in competition [4], so the deposition process parameters (FIB beam current, scan speed and gas flow) have to be optimized.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Morphological and electrical study of FIB deposited amorphous W nanowires

Horváth

Neumann

Tóth

et al. 2007

Microelectronic Engineering

View full text Add to dashboard Cite

“…14 The resistance of tungsten wires can be controlled during fabrication by in situ I-V measurements. These W wires, deposited by dissociation of W͑CO͒ 6 molecules, bridge the extremities of two gold leads of a test structure patterned on thermal SiO 2 ͑200 nm͒ / Si͑100͒ samples.…”

Section: Microheaters Designmentioning

confidence: 99%

“…It has been shown that Ga accumulates on one terminal of the wire during the growth 14 indicating that SiNW doping by Ga is not possible. It has been shown that Ga accumulates on one terminal of the wire during the growth 14 indicating that SiNW doping by Ga is not possible.…”

Section: Electrical Characterizationmentioning

confidence: 99%

Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization

Abed

Sahaf

Reguer

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

In this work, we investigate localized silicon nanowires synthesis in a room temperature-controlled silane filled chamber using submicronic resistors as heating devices. These resistors consist in circuit-connected W wires obtained, on silicon oxide substrates, by focused ion beam induced deposition ͑FIBID͒ technology. Our study demonstrates that the morphology of the synthesized nanowires is temperature and time dependent revealing a thermal gradient but also both vapor-liquid-solid and vapor-solid growth effects. Typical silicon nanowires dimensions are a length of 1-2 m and diameters of 30-40 nm. Structural characterization is performed by high resolution transmission electron microscopy using high energy electron transparent self-supported silicon nitride membranes. Electrical characteristics of FIBID-and self-connected nanowires are obtained. In both cases, they exhibit rectifying behavior.

show abstract

In situ TEM studies of micron‐sized all‐solid‐state fluoride ion batteries: Preparation, prospects, and challenges

Fawey

Chakravadhanula

Reddy

et al. 2016

Microscopy Res & Technique

View full text Add to dashboard Cite

Trustworthy preparation and contacting of micron-sized batteries is an essential task to enable reliable in situ TEM studies during electrochemical biasing. Some of the challenges and solutions for the preparation of all-solid-state batteries for in situ TEM electrochemical studies are discussed using an optimized focused ion beam (FIB) approach. In particular redeposition, resistivity, porosity of the electrodes/electrolyte and leakage current are addressed. Overcoming these challenges, an all-solid-state fluoride ion battery has been prepared as a model system for in situ TEM electrochemical biasing studies and first results on a Bi/La0.9 Ba0.1 F2.9 half-cell are presented. Microsc. Res. Tech. 79:615-624, 2016. © 2016 Wiley Periodicals, Inc.

show abstract

Studies of structures elaborated by focused ion beam induced deposition

Cited by 26 publications

References 3 publications

Morphological and electrical study of FIB deposited amorphous W nanowires

Morphological and electrical study of FIB deposited amorphous W nanowires

Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization

In situ TEM studies of micron‐sized all‐solid‐state fluoride ion batteries: Preparation, prospects, and challenges

Contact Info

Product

Resources

About