Studies of photosensitivity and photo-induced negative differential resistance (NDR) of TIPS-pentacene-poly(3-hexyl)thiophene blend organic thin film transistor

Mansouri, S.; Jouili, A.; Mir, L. El; Al-Ghamdi, Ahmed A.; Yakuphanoğlu, F.

doi:10.1016/j.synthmet.2015.05.016

Cited by 8 publications

(7 citation statements)

References 45 publications

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“…While SGTs are renowned for their ability to achieve record‐high intrinsic gain (reaching ≈10 5 in SGTs based on polycrystalline silicon), [ 40 ] some of the OSGT output characteristics demonstrate an appreciable negative differential resistance (NDR), which increases with V OV (Figure 2d). In TFTs, NDR typically occurs due to trap states at the semiconductor‐insulator interface in the channel region; [ 41,42 ] however, the OTFT results here do not display any NDR. Seeing that SGTs are contact‐controlled devices, the presence of trap states at the semiconductor‐insulator interface is unlikely to be the case.…”

Section: Source‐gated Transistors Versus Thin‐film Transistors: Opera...mentioning

confidence: 73%

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay

Bestelink

Teng

Zschieschang

et al. 2022

Adv Elect Materials

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Low saturation voltages and extremely high intrinsic gain can be achieved in contact‐controlled thin‐film transistors (TFTs) with staggered device architecture, enabled by the energy barrier introduced at the source contact. The resulting device, the source‐gated transistor (SGT), is limited in its usefulness by the high temperature dependence of the drain current induced by the source energy barrier. Here, the interaction between the thermal characteristics of the source contact and the semiconductor to show drastically reduced temperature dependence for SGTs based on organic semiconductors (OSGTs) is exploited. This extraordinarily weak temperature dependence of the drain current is observed regardless of the height of the source energy barrier (27.8% in OSGTs with Ti contacts compared to 22.1% when using Au contacts, over a 34 K range). The reduction in mobility of the semiconductor offsets an increase in thermionic‐field emission of charge carriers at the source. This is a first for SGTs and provides a route to removing one of the last hurdles to their wider adoption. The OSGTs with Ti contacts also demonstrate: drain‐current saturation at very low drain‐source voltages (saturation factor of 0.22); noteworthy stability after 70 days; and minimal drain‐current variation with channel length or illumination.

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Section: Source‐gated Transistors Versus Thin‐film Transistors: Opera...mentioning

confidence: 73%

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay

Bestelink

Teng

Zschieschang

et al. 2022

Adv Elect Materials

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“…When the OPT operates in conduction, including both subthreshold and over-threshold regions, the increase of the drain current with illumination is linked to a modification of the threshold voltage ∆V T . This modification can be associated to an accumulation of trapped photogenerated charges at the organic-insulator interface [49][50][51] or in layers close to the contact regions [52], with a high concentration of defects and traps, in which excitons are photogenerated and subsequently free charges are separated. In the semiconductor bulk, far from these layers and interfaces, the exciton recombination is high due to the absence of high electric fields.…”

Section: Threshold Voltage V Tmentioning

confidence: 99%

Compact modeling of the effects of illumination on the contact region of organic phototransistors

Romero

Jiménez

González

et al. 2019

Organic Electronics

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A good modeling of degrading effects in an electronic device, such as the contact region of organic phototransistors (OPTs), can be favorably used to better describe and optimize the performance of the whole device. Furthermore, a proper design of the contacts can enhance the exciton dissociation and the extraction of photogenerated charge in the device. In this work, a compact model for OPTs is developed. This model is valid for all the operation regimes of the transistors. It includes a model for the contact region of the device that incorporates the effects of illumination. The compact model and the contact region model are validated with published experimental data from several OPTs under different illumination conditions. The tool used to validate the model is an evolutionary parameter extraction procedure developed in a previous work. The results show that both photoconductive and photovoltaic effects impact the intrinsic region of the transistor, as well as the electrical behavior of the contact region. The parameters used in the contact region model are linked to these photovoltaic and photoconductive effects.

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“…This is the axis that the computing manufacturing is transferring towards. Recently, we have shown different applications concerning CNTs [ 11 – 14 ] as we will see later. SWNTs are believed to possess strong mechanical properties due to strong covalent bond among the carbon atoms [ 1 ] (Tables 1 and 2 ).…”

Section: Reviewmentioning

confidence: 99%

Different Technical Applications of Carbon Nanotubes

Abdalla¹,

Al-Marzouki²,

Al-Ghamdi³

et al. 2015

Nanoscale Res Lett

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133

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Carbon nanotubes have been of great interest because of their simplicity and ease of synthesis. The novel properties of nanostructured carbon nanotubes such as high surface area, good stiffness, and resilience have been explored in many engineering applications. Research on carbon nanotubes have shown the application in the field of energy storage, hydrogen storage, electrochemical supercapacitor, field-emitting devices, transistors, nanoprobes and sensors, composite material, templates, etc. For commercial applications, large quantities and high purity of carbon nanotubes are needed. Different types of carbon nanotubes can be synthesized in various ways. The most common techniques currently practiced are arc discharge, laser ablation, and chemical vapor deposition and flame synthesis. The purification of CNTs is carried out using various techniques mainly oxidation, acid treatment, annealing, sonication, filtering chemical functionalization, etc. However, high-purity purification techniques still have to be developed. Real applications are still under development. This paper addresses the current research on the challenges that are associated with synthesis methods, purification methods, and dispersion and toxicity of CNTs within the scope of different engineering applications, energy, and environmental impact.

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Studies of photosensitivity and photo-induced negative differential resistance (NDR) of TIPS-pentacene-poly(3-hexyl)thiophene blend organic thin film transistor

Cited by 8 publications

References 45 publications

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay

Compact modeling of the effects of illumination on the contact region of organic phototransistors

Different Technical Applications of Carbon Nanotubes

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