Studies of optical emission in the high intensity pumping regime of top‐down ZnO nanostructures and thin films grown on c‐sapphire substrates by pulsed laser deposition

Divay, Laurent; Rogers, D. J.; Lusson, A.; Kostcheev, Sergeï; Murtry, Stefan Mc; Lérondel, Gilles; Téherani, F. Hosseini

doi:10.1002/pssc.200779298

Cited by 9 publications

(6 citation statements)

References 9 publications

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“…For a pump power of 400 kW/cm 2 , spontaneous emission is observed at 378 nm due to near band edge (NBE) recombination. Above the stimulated emission threshold, however, the main peak is over ~394 nm, most likely due to electron-hole plasma recombination [11]. With increasing pump power, peak broadening and red shifting are observed.…”

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confidence: 95%

Waveguiding-assisted random lasing in epitaxial ZnO thin film

Dupont

Couteau

Rogers³

et al. 2010

Applied Physics Letters

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Zinc Oxide thin films were grown on c-sapphire substrates using pulsed laser deposition. Pump power dependence of surface emission spectra, acquired using a quadrupled 266 nm laser, revealed room temperature stimulated emission (threshold of 900 kW/cm2). Time dependent spectral analysis plus gain measurements of single-shot, side-emission, spectra pumped with a nitrogen laser revealed random lasing indicative of the presence of self-forming laser cavities. It is suggested that random lasing in an epitaxial system rather than a 3-dimensional configuration of disordered scattering elements, was due to waveguiding in the film. Waveguiding causes light to be amplified within randomly-formed closed-loops acting as lasing cavities

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confidence: 95%

Waveguiding-assisted random lasing in epitaxial ZnO thin film

Dupont

Couteau

Rogers³

et al. 2010

Applied Physics Letters

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“…As the pump intensity was increased up to 0.51 MW/cm 2 , another stimulated emission peak appeared at around 395 nm. This peak was attributed to an N-band electron-hole plasma emission (EHP) [15,16]. In this case, the exciton concentration, n ex (number of excitons.cm -3 ) , is given by [17]: [19]), which implies that charge screening causes excitons to lose their individual nature and form an EHP.…”

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Stimulated emission from ZnO thin films with high optical gain and low loss

Gadallah¹,

Nomenyo²,

Couteau

et al. 2013

Applied Physics Letters

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Abstract:Stimulated surface-and edge-emission were investigated for ZnO thin films grown epitaxially by pulsed laser deposition. The lasing threshold was 0.32 MW/cm 2 for surface pumping and 0.5 MW/cm 2 for edge pumping, which is significantly lower than thresholds observed previously. A modified variable stripe length method was used to measure the gain, which was 1369 cm -1 for Nband emission. Losses were measured using the shifting excitation spot method and values of 6.2 cm -1 and 6.3 cm -1 were found for the N-band and P-band, respectively. The measured gain and loss were the highest and lowest (respectively) ever reported for ZnO films.

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“…Gain has been already observed in epitaxial grown ZnO thin films 12 for a PLD grown sample similar to the one studied here with a typical power density threshold, D th > 40 kW/cm 2 . 6,12,13 Working with a CW laser implies that the edge emission (h > 90 ) cannot be attributed to guided modes but is most probably dominated by leaky modes for which losses are less important. Before going into more detail of the origin of the emission, edge emission is further investigated.…”

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Leaky mode analysis of luminescent thin films: The case of ZnO on sapphire

Aad

Divay

Bruyant

et al. 2012

Journal of Applied Physics

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ZnO/ZnSxSe1−x core/shell nanowire arrays as photoelectrodes with efficient visible light absorption Appl. Phys. Lett. 101, 073105 (2012) Study of the photoluminescence emission line at 3.33eV in ZnO films J. Appl. Phys. 112, 013528 (2012) Correlation of spectral features of photoluminescence with residual native defects of ZnO thin films annealed at different temperatures J. Appl. Phys. 112, 013525 (2012) Optical analysis of doped ZnO thin films using nonparabolic conduction-band parameters Zinc oxide (ZnO) epitaxial thin films grown on c-sapphire substrates by pulsed laser deposition were investigated using angle and polarization-resolved photoluminescence spectroscopy. Side-emission spectra differed significantly from surface-emission spectra in exhibiting dominant, narrow, polarization-resolved peaks. These spectral features were attributed to leaky substrate modes in the layers. Observations were first verified using transmission calculations with nonadjustable parameters, which took into account the dispersion, the anisotropy of the ZnO refractive index, and the dependence on film thickness. Results were consistent with Fabry-Perot-like interference being the origin of the distinctive ZnO luminescence observed at grazing incidence angles. A second analysis, based on the source terms method, was used in order to retrieve the bulk emission properties, including the wavelength-dependent quantum yield and the emission anisotropy. While ZnO thin films were considered here, this analysis method can be extended to any luminescent thin film of similar geometry, demonstrating the potential of leaky mode analysis for probing passive and active material properties. V C 2012 American Institute of Physics.

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Studies of optical emission in the high intensity pumping regime of top‐down ZnO nanostructures and thin films grown on c‐sapphire substrates by pulsed laser deposition

Cited by 9 publications

References 9 publications

Waveguiding-assisted random lasing in epitaxial ZnO thin film

Waveguiding-assisted random lasing in epitaxial ZnO thin film

Stimulated emission from ZnO thin films with high optical gain and low loss

Leaky mode analysis of luminescent thin films: The case of ZnO on sapphire

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