Studies of hysteresis effect in reactive HiPIMS deposition of oxides

Kubart, Tomáš; Aiempanakit, Montri; Andersson, Joakim; Nyberg, Tomas; Berg, Sören; Helmersson, Ulf

doi:10.1016/j.surfcoat.2011.01.019

Cited by 60 publications

(30 citation statements)

References 13 publications

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“…Furthermore, the high peak target current in HiPIMS results in rarefaction of the neutral species in the target's vicinity, as discussed in Section II C, which affects not only Ar gas but also the reactive gas. 87,88 The rarefaction implies that the reactive species flux F is lower than the value corresponding to the nominal partial pressure of the reactive gas. 87,88 …”

Section: F Reactive Hipimsmentioning

confidence: 99%

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An introduction to thin film processing using high-power impulse magnetron sputtering

2012

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High-power impulse magnetron sputtering (HiPIMS) is a promising sputtering-based ionized physical vapor deposition technique and is already making its way to industrial applications. The major difference between HiPIMS and conventional magnetron sputtering processes is the mode of operation. In HiPIMS the power is applied to the magnetron (target) in unipolar pulses at a low duty factor (andlt;10%) and low frequency (andlt;10 kHz) leading to peak target power densities of the order of several kilowatts per square centimeter while keeping the average target power density low enough to avoid magnetron overheating and target melting. These conditions result in the generation of a highly dense plasma discharge, where a large fraction of the sputtered material is ionized and thereby providing new and added means for the synthesis of tailor-made thin films. In this review, the features distinguishing HiPIMS from other deposition methods will be addressed in detail along with how they influence the deposition conditions, such as the plasma parameters and the sputtered material, as well as the resulting thin film properties, such as microstructure, phase formation, and chemical composition. General trends will be established in conjunction to industrially relevant material systems to present this emerging technology to the interested reader.Funding Agencies|Swedish Research Council (VR)|623-2009-7348

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Section: F Reactive Hipimsmentioning

confidence: 99%

“…87,88 The rarefaction implies that the reactive species flux F is lower than the value corresponding to the nominal partial pressure of the reactive gas. 87,88 …”

Section: F Reactive Hipimsmentioning

confidence: 99%

An introduction to thin film processing using high-power impulse magnetron sputtering

2012

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“…The rarefaction affects not only the Ar but also the reactive gas species [12,15]. It has been suggested in the literature [13,16] that the latter has as a consequence a lower effective flux of reactive species towards the target which in turn results in the elimination/suppressions of the hysteresis and the stabilization of the transition zone in reactive HiPIMS processes. The decrease of the pulsing frequency for a constant average power (or current) leads to larger peak target currents and thus more pronounced gas rarefaction.…”

Section: Process Characteristicsmentioning

confidence: 99%

“…The observed behavior has been attributed to several mechanisms, i.e. depletion of reactive gas in front of the target during the pulse ontime [13,15,16] (referred to as gas rarefaction [17][18][19][20][21]), limited target oxidation during the pulse off-time [13], and higher target erosion rate due to the higher target voltage used in HiPIMS as compared to DCMS [14]. However, the question regarding the origin of the process stabilization in reactive HiPIMS still remains.…”

Section: Introductionmentioning

confidence: 99%

Hysteresis and process stability in reactive high power impulse magnetron sputtering of metal oxides

et al. 2011

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In the further development of reactive sputter deposition, strategies which allow for stabilization of the transition zone between the metallic and compound modes, elimination of the process hysteresis, and increase of the deposition rate, are of particular interest. In this study, the hysteresis behavior and the characteristics of the transition zone during reactive high power impulse magnetron sputtering (HiPIMS) of Al and Ce targets in an Ar-O 2 atmosphere as a function of the pulsing frequency and the pumping speed are investigated.Comparison with reactive direct current magnetron sputtering (DCMS) reveals that HiPIMS allows for suppression/elimination of the hysteresis and a smoother transition from the metallic to the compound sputtering mode. For the experimental conditions employed in the present study, optimum behavior with respect to the hysteresis width is obtained at frequency values between 2 and 4 kHz, while HiPIMS processes with values below or above this range resemble the DCMS behavior. Al-O films are deposited using both HiPIMS and DCMS.Analysis of the film properties shows that elimination/suppression of the hysteresis in HiPIMS facilitates the growth of stoichiometric and transparent Al 2 O 3 at relatively high deposition rates over a wider range of experimental conditions as compared to DCMS.

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“…The most important experimental parameter is the target size along with some other deposition parameters such as pumping speed, sputtering gas pressure, pulsing frequency, and duty cycle for the case of HiPIMS. [9,11].…”

Section: Introductionmentioning

confidence: 99%

Effect of peak power in reactive high power impulse magnetron sputtering of titanium dioxide

Aiempanakit

Helmersson

Aijaz

et al. 2011

Surface and Coatings Technology

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The effect of peak power in a high power impulse magnetron sputtering (HiPIMS) reactive deposition of TiO 2 films has been studied with respect to the deposition rate and coating properties. With increasing peak power not only the ionization of the sputtered material increases but also their energy. In order to correlate the variation in the ion energy distributions with the film properties, the phase composition, density and optical properties of the films grown with different HiPIMS-parmeters have been investigated and compared to a film grown using direct current magnetron sputtering (DCMS). All experiments were performed for constant average power and pulse on time (100W and 35 μs, respectively), different peak powers were achieved by varying the frequency of pulsing. Ion energy distributions for Ti and O and its dependence on the process conditions have been studied. It was found that films with the highest density and highest refractive index were grown under moderate HiPIMS conditions (moderate peak powers) resulting in only a small loss in massdeposition rate compared to DCMS. It was further found that TiO 2 films with anatase and rutile phases can be grown at room temperature without substrate heating and without postdeposition annealing.

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Studies of hysteresis effect in reactive HiPIMS deposition of oxides

Cited by 60 publications

References 13 publications

An introduction to thin film processing using high-power impulse magnetron sputtering

An introduction to thin film processing using high-power impulse magnetron sputtering

Hysteresis and process stability in reactive high power impulse magnetron sputtering of metal oxides

Effect of peak power in reactive high power impulse magnetron sputtering of titanium dioxide

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