Nonequilibrium Carrier Dynamics in Semiconductors
DOI: 10.1007/978-3-540-36588-4_31
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Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

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“…This leads to a slight ellipticity in the constant energy surface and a difference in the values for electron effective mass in the basal plane and normal to this plane. Values used here are 0.055m0 in the basal plane and 0.045m0 normal to this plane [39,40]. Non-parabolicity of this conduction band has been taken into account by a normal đť’Ś • đť’‘ model [41].…”
Section: Indium Nitridementioning
confidence: 99%
“…This leads to a slight ellipticity in the constant energy surface and a difference in the values for electron effective mass in the basal plane and normal to this plane. Values used here are 0.055m0 in the basal plane and 0.045m0 normal to this plane [39,40]. Non-parabolicity of this conduction band has been taken into account by a normal đť’Ś • đť’‘ model [41].…”
Section: Indium Nitridementioning
confidence: 99%
“…This leads to a slight ellipticity in the constant energy surface and a difference in the values for electron effective mass in the basal plane and normal to this plane. Values used here are 0.055m 0 in the basal plane and 0.045m 0 normal to this plane [39,40]. Non-parabolicity of this conduction band has been taken into account by a normal k • p model [41].…”
Section: Indium Nitridementioning
confidence: 99%