Studies of GM-APD (SiPM) properties

Ahmed, G.S.M.; Márton, J.; Schafhauser, M; Suzuki, K.; Bühler, P.

doi:10.1088/1748-0221/4/09/p09004

Cited by 8 publications

(8 citation statements)

References 3 publications

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“…The measured time resolution of the detector was found to be rather poor as a TOF counter (350 ± 100 ps). However, it is roughly in agreement with our previous measurements under laboratory conditions using a short pulse width laser (Advanced laser diode systems, EIG1000D+PIL040, pulse width 32 ps at wave length of 408 nm) with the same type of SiPM, pre-amplifiers and readout electronics at the given number of photons (400 ps at ∼ 8 photons for one SiPM, 400/ √ (2) ∼ 280 ps for the average of two SiPM) [12].…”

Section: Discussionsupporting

confidence: 91%

“…The average number of 8 photons detected in each SiPM is according to our offline measurement in the range of rapidly dropping time resolution as a function of the number of photons (see e.g. [12]) and therefore time resolution is expected to be improved by collecting more photons. Increasing further the thickness of the radiator from currently 1 cm is not a solution for all applications and would only help if the generated photons are effectively guided onto the SiPMs.…”

Section: Discussionmentioning

confidence: 99%

“…The maximum photodetection efficiency is ∼ 65% at 440 nm. Measurements of dark current, dark count rate and timing performance of this device have been presented elsewhere [12].…”

Section: Prototype Cherenkov Detectormentioning

confidence: 99%

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Study of timing performance of silicon photomultiplier and application for a Cherenkov detector

Ahmed

Bühler

Márton

et al. 2011

Nuclear Instruments and Methods in Physics Research Section A:

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Silicon photomultipliers are very versatile photo detectors due to their high photon detection efficiency, fast response, single photon counting capability, high amplification, and their insensitivity to magnetic fields. At our institute we are studying the performance of these photo detectors at various operating conditions. On the basis of the experience in the laboratory we built a prototype of a timing Cherenkov detector consisting of a quartz radiator with two 3 × 3 mm 2 MPPCs S10362-33-100C from Hamamatsu Photonics as photodetectors. The MPPC sensors were operated with Peltier cooling to minimize thermal noise and to avoid gain drifts. The test measurements at the DAΦNE Beam-Test Facility (BTF) at the Laboratori Nazionali di Frascati (LNF) with pulsed 490 MeV electrons and the results on timing performance with Cherenkov photons are presented.

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Section: Discussionsupporting

confidence: 91%

Section: Discussionmentioning

confidence: 99%

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Study of timing performance of silicon photomultiplier and application for a Cherenkov detector

Ahmed

Bühler

Márton

et al. 2011

Nuclear Instruments and Methods in Physics Research Section A:

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“…Measurements of dark current, dark count rate and cross-talk and time resolution of this device have been presented in Ref. [9,10]. …”

Section: Detector Designmentioning

confidence: 99%

SiPM-based veto detector for the pion beam at FOPI

et al. 2012

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Recently the FOPI collaboration carried out an experiment to study the in medium properties of the K + K − system by using the pion beam interactions at 1.7 GeV/c. The experiment with a pion beam poses specific requirements to the detectors and therefore the original FOPI setup needed modifications. The new hardware developments for this experiment include the replacement of the veto detector with another more compact design. Within this report we describe the design and results of a test measurement of the new FOPI veto detector system with the pion beam.

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“…According to Hamamatsu the time resolution at 25 • C, nominal operation voltage, and single photon level is σ ≈ 230 ps. Measurements of dark current, dark count rate and cross-talk of this device have been presented elsewhere [6,5].…”

Section: Introductionmentioning

confidence: 99%

Silicon photomultiplier timing performance study

Ahmed¹,

Bühler²,

Márton³

et al. 2011

Nuclear Instruments and Methods in Physics Research Section A:

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Many characteristics of Silicon Photomultipliers can be tuned with temperature and operation voltage. We present preliminary results of a study of the effect of these two operation parameters on the time resolution of large active area Multi-Pixel Photon Counters (MPPCs) manufactured by Hamamatsu. Measurements at −10 • C, 0 • C, and 10 • C at different bias voltages were performed. The time resolution is best at low temperature and high over-voltage. Most significant improvements can be achieved in cases with low number of fired pixels (<10 pixels). Between the worst and best case among the considered conditions a factor of 5 improvement was observed. In cases with large number of fired pixels (>40 pixels) the effect of temperature and operation voltage becomes smaller. The timing performance still improves with decreasing temperature (≈ factor of 2) but it hardly depends on the operation voltage. The study shows, that especially in applications where only few photons are available for detection a careful optimization of temperature and operation voltage are advisable to obtain optimum timing results with the MPPC.

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Studies of GM-APD (SiPM) properties

Cited by 8 publications

References 3 publications

Study of timing performance of silicon photomultiplier and application for a Cherenkov detector

Study of timing performance of silicon photomultiplier and application for a Cherenkov detector

SiPM-based veto detector for the pion beam at FOPI

Silicon photomultiplier timing performance study

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