Studies of evaporated amorphous GeSe2 films as a function of annealing

Thèye, M. L.; Kotkata, M. F.; Kandil, K.M.; Gheorghiu, A.; Sénémaud, C.; Dixmier, J.; Pradal, F.

doi:10.1016/s0022-3093(05)80281-9

Cited by 9 publications

(3 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The value of the optical gap energy of the irradiated portion of the a-Ge film in contact with Se indicates that the alloying process was initiated during laser irradiation. Theye et al 11 investigated the effect of photoannealing of a-GeSe 2 films just below the glass transition temperature; their result suggests that the short range order diminishes with the formation of crystal-like structure. This confirms our result that long exposure might have transformed the alloy into microcrystallites of GeSe.…”

Section: Resultsmentioning

confidence: 99%

LASER-INDUCED PROCESS OF BINARY ALLOYING OF Ge–Se

et al. 1999

View full text Add to dashboard Cite

Thin films of chalcogenides are synthesized by CW argon ion laser irradiation of separate Ge/Se and Se/Te film sandwiches according to near stoichiometric proportions. The compound formation and crystalline transition of amorphous Se film are characterized by observing photomicrographs and optical absorption spectra. The composite film of bilayer Ge/Se does not form compounds but deposits as separate elements under equivalent laser fluence.

show abstract

Section: Resultsmentioning

confidence: 99%

LASER-INDUCED PROCESS OF BINARY ALLOYING OF Ge–Se

et al. 1999

View full text Add to dashboard Cite

show abstract

“…Annealing effects on 1-1.5 ~m-thick GeSe films have been reported by Theye et al [40], in which the authors use photothermal deflection in the subgap region. The resulting absorption ranges from a = 101 to 10 3 cm -1 as h goes from 1.2 to 0.5/xm.…”

Section: Amorphous Gese and Selenium Films (A-gese A-se)mentioning

confidence: 90%

Photothermal Deflection Measurements of the Extinction Coefficient k

Briggs

1997

Handbook of Optical Constants of Solids

View full text Add to dashboard Cite

“…In previous studies [27][28][29], it was proposed that the atomic structure of melt-quenched Ge x Se 1Àx glasses is much more ordered than would be expected from the continuous-random-network model. Accordingly, Ge x Se 1Àx glasses may be described by chemically ordered clusters embedded in a continuous network.…”

Section: Samplementioning

confidence: 99%

Evidence for insulator–metal transition in amorphous chalcogenide Se–Ge–Te films

El-Hakim

Kotkata

2007

Philosophical Magazine

View full text Add to dashboard Cite

The temperature dependence of the dc conductivity and thermoelectric power was determined for five different amorphous chalcogenide Se-Ge-Te films, with Ge ¼ 3.0-22 at.%, Se ¼ 0-97 at.% and Te ¼ 0-97 at.%. The films were prepared by thermal evaporation of GeSe 4 , GeTe 4 and GeSe 2 Te 2 quenched bulk materials. Values of the activation energy calculated from the temperature dependence of both electrical conductivity and thermoelectric power showed a decrease with increasing Ge content in the Se-Ge films as well as with replacement of Te for Se in the Se-Ge-Te films. The results showed an Anderson transition, with the conductivity showing insulating behaviour on the Ge-Se side to metallic behaviour at the binary composition Ge-Te. The radius of localization was obtained for the different compositions investigated. The wave function associated with the charge carriers at the composition Ge 3.3 Te 96.7 is non-localized. A minimum metallic conductivity of 237 AE 5 ( cm) À1 was found.

show abstract

Studies of evaporated amorphous GeSe2 films as a function of annealing

Cited by 9 publications

References 11 publications

LASER-INDUCED PROCESS OF BINARY ALLOYING OF Ge–Se

LASER-INDUCED PROCESS OF BINARY ALLOYING OF Ge–Se

Photothermal Deflection Measurements of the Extinction Coefficient k

Evidence for insulator–metal transition in amorphous chalcogenide Se–Ge–Te films

Contact Info

Product

Resources

About