Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress: Final Technical Report, 16 October 2001 - 31 August 2005

Kaydanov, V.; Ohno, T. R.

doi:10.2172/899988

Cited by 6 publications

(5 citation statements)

References 48 publications

(49 reference statements)

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“…It was observed in this experimental work that CdS thin films had a mixed structure of H (0 0 2) and C (1 1 1) for both techniques. So CdS has a polycrystalline behavior [20][21][22][30][31][32][33][34][35][36][37][38][39]. Preferred orientation is (0 0 2) and structure is hexagonal as shown in Figure 8.…”

Section: Structural Analysis Of Cds By Chemical Bath Deposition (Cbd)mentioning

confidence: 99%

Effects of CdCl2 Treatment on Physical Properties of CdTe/CdS Thin Film Solar Cell

Shah¹,

Rabeel²,

Abbas³

et al. 2017

Modern Technologies for Creating the Thin-Film Systems and Coatings

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We report CdTe, CdS, and ITO thin films on glass substrates for solar cell fabrication by closed space sublimation and chemical bath deposition. CdTe and CdS thin films were sublimated to chemical treatment at 25°C in a saturated CdCl 2 solution (1.04 g/100 ml methanol) and heat treated at 400°C for 30 minutes. Indium tin oxide and tellurium films were analyzed by spectrophotometer and scanning electron microscopy. It has been observed that solar cell performance can be improved by depositing a CdCl 2 layer on the CdTe/CdS layers. The optical, structural, and morphological changes of CdTe and CdS surfaces on CdTe/CdS/ITO/glass solar cells due to CdCl 2 solution treatment followed by annealing for 400°C were studied. Optical analysis showed about 15% decrease in transmittance after CdCl 2 heat treatment in case of CdTe thin film, whereas CdS thin film demonstrated an increase of about 10-15% transmittance after CdCl 2 heat treatment. Similarly, a decrease in band gap values was found for both CdTe and CdS thin films after CdCl 2 heat treatment. XRD and SEM results of CdCl 2 heat-treated CdTe and CdS samples showed recrystallization, reorientation, and progressive increase in grain size. The grain sizes of CdTe and CdS samples demonstrated an increase of about 0.2 µm.

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Section: Structural Analysis Of Cds By Chemical Bath Deposition (Cbd)mentioning

confidence: 99%

Effects of CdCl2 Treatment on Physical Properties of CdTe/CdS Thin Film Solar Cell

Shah¹,

Rabeel²,

Abbas³

et al. 2017

Modern Technologies for Creating the Thin-Film Systems and Coatings

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“…To check for hysteresis a reverse sweep immediately follows starting at +0.5V and decrementing in 50mV steps down to -2V. The C-V measurements are taken in the dark at 10 o C intervals starting at -190 o C and going to 20 o C. The apparatus setup is described in our Final 2005 Report to NREL [1] and in [8]…”

Section: Capacitance-voltage Profiling At Varying Temperature (C-v-t)mentioning

confidence: 99%

Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress; Annual Technical Report, 1 November 2005 - 31 October 2006

Beach¹,

Seymour²,

Kaydanov³

et al. 2007

Self Cite

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We describe the results of our continuing study of deep electronic states controlling open-circuit voltage in CdTe/CdS thin-film solar cells (Task 1). The study includes: (1) analysis of factors affecting trap signatures derived from admittance spectroscopy and capacitance transients measurements, such as activation-energy capture cross-sections and trapdensity estimates, and (2) comparative studies of cells received from four different sources and prepared with significant variations in cell structure and processing procedures.

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“…9 Other authors propose that Cu Cd might be present with a concentration of $1 Â 10 17 cm À3 and the widely observed hole concentration of $1 Â 10 14 cm À3 might occur due to partial ionization and compensation. 10,11 In this work, CdTe solar cells in substrate and superstrate configuration were investigated to access the problem of Cu doping. CdTe thin films directly deposited on glass (BSG Corning 7059) doped with Cu were additionally studied and numerical simulations were performed.…”

Section: Introductionmentioning

confidence: 99%

A comprehensive picture of Cu doping in CdTe solar cells

Perrenoud¹,

Kranz²,

Gretener³

et al. 2013

Journal of Applied Physics

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The importance of Cu for CdTe solar cell absorber doping has been increasingly recognized in recent years. Currently different models are being discussed how to understand the case of Cu Cd substitutional doping in polycrystalline CdTe solar cells. In this work, an understanding is developed, which is based on a low concentration deep acceptor doped CdTe layer (N a $ 5 Â 10 14 cm À3 ,E a $ 300 meV above the valence band). Despite their non-shallow nature, Cu Cd acceptors are fully or at least heavily (>30%) ionized. The low hole concentration in CdTe ($1 Â 10 14 cm À3) originates directly from low Cu solubility in CdTe bulk material and is not caused by partial ionization or compensation as proposed by earlier models. The three to four orders of magnitude difference between bulk acceptor concentration and average Cu concentration in polycrystalline CdTe is attributed to grain boundary segregation of Cu. Our model is derived from substrate and superstrate CdTe solar cell measurements, controlled CdTe doping and quenching, Hall Effect measurements of CdTe films, numerical and analytical calculations, and a broad literature survey. Based on these results, routes to improve the conversion efficiency of CdTe solar cells are discussed. V

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Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress: Final Technical Report, 16 October 2001 - 31 August 2005

Cited by 6 publications

References 48 publications

Effects of CdCl2 Treatment on Physical Properties of CdTe/CdS Thin Film Solar Cell

Effects of CdCl2 Treatment on Physical Properties of CdTe/CdS Thin Film Solar Cell

Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress; Annual Technical Report, 1 November 2005 - 31 October 2006

A comprehensive picture of Cu doping in CdTe solar cells

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