Studies of Ag photodoping in glassy<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Se</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>films by electron-energy-loss spectroscopy

Meixner, A. E.; Chen, C. H.

doi:10.1103/physrevb.27.7489

Cited by 14 publications

(1 citation statement)

References 13 publications

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“…Different experimental methods including Raman spectroscopy, 4 Rutherford spectroscopy, 4–7 electrical resistance measurements, 8 secondary ion mass spectroscopy, 9 modulated temperature scanning calorimetry, 10 Moessbauer spectroscopy, 9 X‐ray diffraction, 3,11 electron diffraction, 12 optical spectroscopy, 11 ellipsometry, 13 grazing‐incidence X‐ray scattering, 6 differential anomalous scattering, 6 extended X‐ray absorption fine structure (EXAFS), 6,8 transmission electron microscopy, 14 microlithography technique 7 , atomic force microscopy, and electron energy‐loss spectroscopy 16 have been used to obtain structural information connected with photodoping. In spite of this remarkable list of available data, the mechanism of electronic and structural transformations accompanying the photodiffusion of Ag into the Ge x Se 1−x matrix remains unclear.…”

Section: Introductionmentioning

confidence: 99%

In Situ Measurements of X‐Ray‐Induced Silver Diffusion into a Ge₃₀Se₇₀ Thin Film

Kovalskiy¹,

Miller²,

Jain³

et al. 2007

Journal of the American Ceramic Society

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High‐resolution X‐ray photoelectron spectroscopy is used to identify the mechanism of X‐ray‐induced Ag diffusion into Ge30Se70 chalcogenide glass thin films, which are prepared in situ to avoid oxygen contamination. From the analysis of Ge 3d, Se 3d, and Ag 3d core levels, and valence band spectra, changes in the electronic structure are determined as Ag diffuses gradually with increasing irradiation. The ternary phase based on Ge2Se6 units, which contains homopolar Ge–Ge bonds, forms when diffusion approaches equilibrium where Ag content ∼30 at.%. The formation of a Se‐rich composition is indicated in the near‐surface region at the initial stage of the process, but the previously assumed Ag2Se phase is not detected.

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Section: Introductionmentioning

confidence: 99%

In Situ Measurements of X‐Ray‐Induced Silver Diffusion into a Ge₃₀Se₇₀ Thin Film

Kovalskiy¹,

Miller²,

Jain³

et al. 2007

Journal of the American Ceramic Society

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Silver photodissolution and optical properties of GeSe3 vitreous glass thin films

Konan¹,

Galibert²,

Calas³

1988

Phys. Stat. Sol. (a)

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The photodoping of Ag in thin layers of amorphous GeSe, semiconductors is studied according to the intensity and wavelength of the radiation used. This study is based on the electrical resistance variation of the Ag layer deposited above (or underneath) GeSe, for a given radiation. Optical measurements for wavelengths from 350 nm to 2.5 pm allow to determine the absorption coefficient a for transparency zones, the index of refraction, and the extinction coefficient of GeSe,.Photodotierung von Ag in diinne amorphe GeSe,-Halbleiterschichten wird beziiglich der Intensitit und Wellenlinge der benutzten Strahlung untersucht. Diese Untersuchung beruht auf der h d e r u n g des elektrischen Widerstands der Ag-Schicht, die auf (oder unter) GeSe, aufgebracht wird, mit der gegebenen Strahlung. Die optischen Messungen fur Wellenliingen von 350 nm bis 2,5 pm erlauben, den Absorptionskoeffizienten a fur transparente Bereiche, den Brechungsindex und den Extinktionskoeffizienten von GeSe, zu bestimmen.

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Photocarrier Drift Mobility in Bulk Vitreous GeSe₃ in the Temperature Range 60 to 300 K

Calas¹,

Abdelmaksoud²,

Avérous³

1988

Physica Status Solidi (b)

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Studies of Ag photodoping in glassyGexSe1−xfilms by electron-energy-loss spectroscopy

Cited by 14 publications

References 13 publications

In Situ Measurements of X‐Ray‐Induced Silver Diffusion into a Ge₃₀Se₇₀ Thin Film

In Situ Measurements of X‐Ray‐Induced Silver Diffusion into a Ge₃₀Se₇₀ Thin Film

Silver photodissolution and optical properties of GeSe3 vitreous glass thin films

Photocarrier Drift Mobility in Bulk Vitreous GeSe₃ in the Temperature Range 60 to 300 K

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Studies of Ag photodoping in glassyGexSe1−xfilms by electron-energy-loss spectroscopy

Cited by 14 publications

References 13 publications

In Situ Measurements of X‐Ray‐Induced Silver Diffusion into a Ge30Se70 Thin Film

In Situ Measurements of X‐Ray‐Induced Silver Diffusion into a Ge30Se70 Thin Film

Silver photodissolution and optical properties of GeSe3 vitreous glass thin films

Photocarrier Drift Mobility in Bulk Vitreous GeSe3 in the Temperature Range 60 to 300 K

Contact Info

Product

Resources

About

In Situ Measurements of X‐Ray‐Induced Silver Diffusion into a Ge₃₀Se₇₀ Thin Film

In Situ Measurements of X‐Ray‐Induced Silver Diffusion into a Ge₃₀Se₇₀ Thin Film

Photocarrier Drift Mobility in Bulk Vitreous GeSe₃ in the Temperature Range 60 to 300 K