Morphology of TiN thin films grown on MgO (001) by reactive dc magnetron sputtering J. Vac. Sci. Technol. A 28, 912 (2010); 10.1116/1.3357303Oxygen-assisted control of surface morphology in nonepitaxial sputter growth of Ag Interdependence between stress, preferred orientation, and surface morphology of nanocrystalline TiN thin films deposited by dual ion beam sputtering Epitaxial Ag(001) layers were deposited on MgO(001) in order to study electron surface scattering. X-ray reflection indicates 3D layer nucleation with a high rms surface roughness of 1.0 nm for a layer thickness d ¼ 3.5 nm. X-ray diffraction shows that f111g twins form at d < 11 nm, followed by 2nd generation twinning for 11 nm < d < 120 nm. Increasing the growth temperature from 25 to 150 C suppresses 2nd generation twinning and reduces the twin density by 2 orders of magnitude. In situ deposition of epitaxial 2.5-nm-thick TiN(001) underlayers prior to Ag deposition results in twin-free single-crystal Ag(001) with 10 Â smoother surfaces for d ¼ 3.5 nm. This is attributed to a better wetting on the higher energy TiN(001) than MgO(001) surface, resulting in the absence of 3D nuclei with exposed f111g facets, which facilitate twin nucleation. The twinned Ag/MgO layers have a higher resistivity q than the single crystal Ag/TiN layers at both 298 and 77 K, due to electron scattering at grain and twin boundaries. The q for single-crystal Ag layers increases with decreasing d, which is well explained with known surface scattering models and provides specularity parameters for the Ag-vacuum and the Ag-air interfaces of p ¼ 0.8 6 0.1 and 0.4 6 0.1, respectively. A comparison with corresponding epitaxial Cu(001) layers shows that q Ag < q Cu for d > 50 nm, consistent with known bulk values. However, q Ag > q Cu for d < 40 nm. This is attributed to the larger electron mean free path for electron-phonon scattering and a correspondingly higher resistivity contribution from surface scattering in Ag than Cu. In contrast, air exposure causes q Ag < q Cu for all d, due to diffuse scattering at the oxidized Cu surface and the correspondingly higher Cu resistivity.