Structures of glide-set 90° partial dislocation cores in diamond cubic semiconductors

Beckman, Scott P.; Chrzan, D. C.

doi:10.1016/j.physb.2003.09.192

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…The interaction between the predicted ground state reconstructions as well as the secondary reconstruction phases and other intrinsic defects on the dislocation line, such as kinks and jogs, results in a rich collection of structural excitations [22]. Understanding the energies of the PSD and other reconstruction defects is important for understanding the nature of the dislocation core, and there exist methods for investigating effect of the interaction of these structures along the dislocation line [23]. However, the focus of the work here will be exclusively on the ideal dislocation core, without reconstruction defects.…”

Section: Original Papermentioning

confidence: 99%

Structure and energy of the partial dislocation cores in GaAs

Beckman

Chrzan

2006

Physica Status Solidi (b)

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A methodology for investigating isolated α and β partial dislocations in III-V semiconductors is presented. Using this method the 30° and 90°, α and β partial dislocations in GaAs are investigated. The structures of the proposed core reconstructions are investigated. For the 90° partials, two reconstructions have been proposed. The relative energies of the two reconstructions are investigated in addition to the structural investigation.

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Section: Original Papermentioning

confidence: 99%

Structure and energy of the partial dislocation cores in GaAs

Beckman

Chrzan

2006

Physica Status Solidi (b)

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“…Recently, another spin model has been proposed independently to study the relative populations of the SP and DP structures on the 90 • partial in silicon (Beckman and Chrzan 2003). To each dislocation site they assign two spin variables which in conjunction give a total of six possible values for any given site.…”

Section: Resultsmentioning

confidence: 99%

The equilibrium structures of the 90° partial dislocation in silicon

Valladares¹,

Sutton²

2005

J. Phys.: Condens. Matter

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We consider the free energies of the single-period (SP) and double-period (DP) core reconstructions of the straight 90° partial dislocation in silicon. The vibrational contributions are calculated with a harmonic model. It is found that it leads to a diminishing difference between the free energies of the two core reconstructions with increasing temperature. The question of the relative populations of SP and DP reconstructions in a single straight 90° partial dislocation is solved by mapping the problem onto a one-dimensional Ising model in a magnetic field. The model contains only two parameters and is solved analytically. It leads to the conclusion that for the majority of the published energy differences between the SP and DP reconstructions the equilibrium core structure is dominated by the DP reconstruction at all temperatures up to the melting point. We review whether it is possible to distinguish between the SP and DP reconstructions experimentally, both in principle and in practice. We conclude that aberration corrected transmission electron microscopy should be able to distinguish between these two core reconstructions, but published high resolution micrographs do not allow the distinction to be made.

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Reconstruction energies of partial dislocations in cubic semiconductors

Beckman¹,

Chrzan

2007

Phys. Rev. B

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Structures of glide-set 90° partial dislocation cores in diamond cubic semiconductors

Cited by 6 publications

References 8 publications

Structure and energy of the partial dislocation cores in GaAs

Structure and energy of the partial dislocation cores in GaAs

The equilibrium structures of the 90° partial dislocation in silicon

Reconstruction energies of partial dislocations in cubic semiconductors

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