2019
DOI: 10.1021/acs.jpcc.9b08608
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Structures and Thermodynamics of MgO/SiO Interfaces

Abstract: Silicon monoxide is a complex material which tends to form atomic and nanoscale amorphous structures. The question is in which ways can the stability of SiO on suitable carriers or interfaces be enhanced. This was investigated by statistical thermodynamics based on density functional theory calculations on SiO layers on and in-between MgO(100) model surfaces. Furthermore, the stability of ordered close-packed SiO layers and their relaxation into amorphous structures were studied. Some selected SiO structures b… Show more

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Cited by 3 publications
(3 citation statements)
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“…The results are given in Table 1. It should be noted that the entire discussion is based on single-point calculations of geometry-optimized structures reflecting a formal situation at T = 0 K. However, this does not take into account the vibrational zero point energies, excess entropies, and excess heat capacities of the surfaces that have been studied for simpler surfaces such as MgO(110) [77]. Note that the mass equilibrium at T = 0 K is orthorhombic and not cubic [70].…”
Section: Ab-initio Calculations and Theoretical Considerationsmentioning
confidence: 99%
“…The results are given in Table 1. It should be noted that the entire discussion is based on single-point calculations of geometry-optimized structures reflecting a formal situation at T = 0 K. However, this does not take into account the vibrational zero point energies, excess entropies, and excess heat capacities of the surfaces that have been studied for simpler surfaces such as MgO(110) [77]. Note that the mass equilibrium at T = 0 K is orthorhombic and not cubic [70].…”
Section: Ab-initio Calculations and Theoretical Considerationsmentioning
confidence: 99%
“…Also the external quantum efficiency was enhanced from 62.5% to 89.5% upon illumination from 350 to 600 nm light. MgO has advantages of high optical transparency, superior chemical inertness, good thermal stability, and very high bandgap of 7.8 eV. , The MgO layer has been applied to passivate the surface defects of ZnO and TiO 2 , suppressing the interface/surface recombination and reducing the dark current of the devices. , In this study, NiO and MgO layers were inserted into p-Si/n-ZnO HPDs to increase UV response and suppress visible response. The effects of NiO and MgO insertion layers on HPDs were studied in detail.…”
Section: Introductionmentioning
confidence: 99%
“…MgO has advantages of high optical transparency, superior chemical inertness, good thermal stability, and very high bandgap of 7.8 eV. 34,35 The MgO layer has been applied to passivate the surface defects of ZnO and TiO 2 , suppressing the interface/ surface recombination and reducing the dark current of the devices. 36,37…”
Section: Introductionmentioning
confidence: 99%