Structures and Electrical Properties of Tin Doped Indium Oxide (ITO) Films Deposited on Different Substrates by Sputtering with H2O Introduction

Effects of hydrogen and SiO2 buffer layer insertion on electrical properties of low-resistive indium tin oxide films formed on polyethylene naphthalate films

“…31) Later on, an Aoyama Gakuin group led by Shigesato extended their study of the H 2 O effect on sputtered ITO films, and hydrogen incorporation was revealed by secondary ion mass spectroscopy. 32,33) H 2 O effects have also been studied by several other groups such as Ando et al, 34,35) Nishimura et al, 36) Rottmann et al, 37,38) and Wang et al, 39) and similar results were obtained. Koida [40][41][42] The H 2 effect, on the other hand, was studied by Zhang et al, 25) Betz et al, 26) Luo et al, 43,44) Marikkannan et al, 45) and Juneja et al, 46) and the effect of H 2 O and H 2 on sputtered oxide films were reviewed by Abe.…”

Atomic Layer Deposition of In2O3 Using Cyclopentadienyl Indium: A New Synthetic Route to Transparent Conducting Oxide Films

“…In 2 O 3 thin films have applications as transparent conducting oxides (TCOs), gas sensors, − and catalysts. − For optimum performance, all of these applications require precise control over film thickness and composition, and some require the ability to coat high aspect ratio or porous materials. ,− In 2 O 3 thin films can be deposited using a variety of methods including sputtering, , chemical vapor deposition, − and atomic layer deposition (ALD). − Of these techniques, ALD shows significant promise as this method affords excellent control over both the thickness and the composition of the deposited film . Most importantly, ALD offers unmatched conformality that enables the coating of porous materials with aspect ratios in excess of 1000. − …”