2019
DOI: 10.1016/j.solmat.2018.12.040
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Structure, thermal stability and optical simulation of ZrB2 based spectrally selective solar absorber coatings

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Cited by 47 publications
(24 citation statements)
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“…based multilayer absorber coatings have been reported for CSP application. 17,22 Similar to TiB 2 and ZrB 2 , NbB 2 forms a hexagonal AlB 2 crystal structure (space group P6/mmm) with alternating layers of metal and graphite-like boron atoms. 28,29 The unit cell, consisting of two boron and one metal atom, gives rise to 11 electrons.…”
Section: Rationalizing Solar Selectivity By a Gradient In The Refractive Index Of Ss/nbb 2 /Nb(bno)/al 2 Omentioning
confidence: 99%
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“…based multilayer absorber coatings have been reported for CSP application. 17,22 Similar to TiB 2 and ZrB 2 , NbB 2 forms a hexagonal AlB 2 crystal structure (space group P6/mmm) with alternating layers of metal and graphite-like boron atoms. 28,29 The unit cell, consisting of two boron and one metal atom, gives rise to 11 electrons.…”
Section: Rationalizing Solar Selectivity By a Gradient In The Refractive Index Of Ss/nbb 2 /Nb(bno)/al 2 Omentioning
confidence: 99%
“…51,52 Al 2 O 3 is one of the widely used anti-reflection layers in spectrally selective absorber coatings. 17,23,31,52 Due to the considerable difference in the refractive indices between the absorbing layer and air, there will be a reflection loss at the interface. To minimize the top surface reflection loss, an appropriate dielectric coating, whose refractive index is close to that of air, must be deposited on the top.…”
Section: Rationalizing Solar Selectivity By a Gradient In The Refractive Index Of Ss/nbb 2 /Nb(bno)/al 2 Omentioning
confidence: 99%
“…Gao et al reported a stainless steel/ZrB 2 /Al 2 O 3 SSA deposited by magnetron sputtering, exhibiting great spectral selectivity (trueα¯ = 92%, trueε¯ = 11% at 82 °C) and decent thermal stability at 500 °C in vacuum. [ 98 ] Among semiconductors, amorphous Si is the first material that was used to construct SSAs with an trueα¯ of ≈80% and an trueε¯ of ≈13% at 400 °C. [ 95 ] A Ge‐based multilayer semiconductor absorber that with a measured trueα¯ of 76% and a low trueε¯ of 5% was presented by Thomas et al.…”
Section: Mechanism and Recent Progress Of Ssasmentioning
confidence: 99%
“…In recent decades, significant fundamental advances combined with the spectacular progress of nano-scale fabrication methods have led to a broad range of innovations in the design of optical thin-film. Many applications, such as broadband filter [1][2] [3], solar absorber [4][5] [6], and radiative cooling device [7] [8], increasingly rely on the intricate nanostructure design for greater performance at target wavelengths. Most of researchers make such designs based on human intelligence to solve a fundamental photonic problem: choosing the best combination of materials and nano-structure of a layered optical thin-film.…”
Section: Introductionmentioning
confidence: 99%