STRUCTURE SIMILARITY AND LATTICE DYNAMICS OF InSe AND In_4Se_3 CRYSTALS

Bercha, None; Rushchanskii,; Kharkhalis,; Sznajder,

doi:10.5488/cmp.3.4.749

Cited by 12 publications

(4 citation statements)

References 4 publications

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“…The similar values were calculated from LEED experimental data shown on Fig. 1 e, f. Such derived values correlates well with the same for the bulk InSe [14].…”

Section: Resultssupporting

confidence: 88%

Indium Deposited Nanosystem Formation on InSe (0001) Surface Applied as Template

Galiy¹,

Nenchuk²,

Ciszewski³

et al. 2019

Metallofiz. Noveishie Tekhnol.

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Surface of two-dimensional InSe layered semiconductor crystal is applied as template for directed assembly of indium nanostructures. The study of In/(0001)InSe surface nanosystem formation is conducted using scanning tunnelling microscopy data. Indium is thermally deposited on structurally perfect InSe crystal cleavages obtained in ultra-high vacuum experimental conditions. It is able to achieve the formation of nanosized triangular shaped structures in a result of the solid state dewetting process by surface heating above the indium melting point. Moreover, the spatial arrangement of such nanostructures is powered by hexagonal lattice symmetry of InSe surface.

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“…The similar values were calculated from LEED experimental data shown on Fig. 1 e, f. Such derived values correlates well with the same for the bulk InSe [14].…”

Section: Resultssupporting

confidence: 88%

Indium Deposited Nanosystem Formation on InSe (0001) Surface Applied as Template

Galiy¹,

Nenchuk²,

Ciszewski³

et al. 2019

Metallofiz. Noveishie Tekhnol.

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“…Lin et al noticed that the Pb and Sn substitute at different In-sites (In4 and In2 sites respectively) when they re-examine the formation energy calculation of In 4 Se 3 [27]. The crystal structure of In 4 Se 3 consists of In 1+ cations and [(In 3 ) 5+ (Se 3 ) 6− ] 1− anionic staking layers along the a -axis [35,38,39]. …”

Section: Resultsmentioning

confidence: 99%

“…Compared to the atomic radius of selenium, the slightly smaller chlorine atom may be more easily occupied at the Se site in the lattice of the 4:3 indium selenide than the much smaller fluorine, the same size bromine, and the larger iodine atom. It has been reported that the crystal structure of In 4 Se 3 consists of [(In 3 ) 5+ (Se 3 ) 6− ] 1− anionic layers (Se1, Se2, Se3 sites) and In 1+ cations with a weak van der Waals interaction along the a -axis between the layers and strong covalent-ionic interaction in the bc -planes within the layer [ 17 , 34 , 35 ].…”

Section: Resultsmentioning

confidence: 99%

Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides

Rhyee

Kim

2015

Materials

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Researchers have long been searching for the materials to enhance thermoelectric performance in terms of nano scale approach in order to realize phonon-glass-electron-crystal and quantum confinement effects. Peierls distortion can be a pathway to enhance thermoelectric figure-of-merit ZT by employing natural nano-wire-like electronic and thermal transport. The phonon-softening known as Kohn anomaly, and Peierls lattice distortion decrease phonon energy and increase phonon scattering, respectively, and, as a result, they lower thermal conductivity. The quasi-one-dimensional electrical transport from anisotropic band structure ensures high Seebeck coefficient in Indium Selenide. The routes for high ZT materials development of In4Se3−δ are discussed from quasi-one-dimensional property and electronic band structure calculation to materials synthesis, crystal growth, and their thermoelectric properties investigations. The thermoelectric properties of In4Se3−δ can be enhanced by electron doping, as suggested from the Boltzmann transport calculation. Regarding the enhancement of chemical potential, the chlorine doped In4Se3−δCl0.03 compound exhibits high ZT over a wide temperature range and shows state-of-the-art thermoelectric performance of ZT = 1.53 at 450 °C as an n-type material. It was proven that multiple elements doping can enhance chemical potential further. Here, we discuss the recent progress on the enhancement of thermoelectric properties in Indium Selenides by increasing chemical potential.

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“…Recent theoretical calculations by Bercha et al concentrated on the peculiarities of the band structure, phonon spectrum, and lattice dynamics of crystalline In 4 Se 3 . [22][23][24] …”

Section: Crystalline In X Se Y Structuresmentioning

confidence: 99%

ModelingIn−Seamorphous alloys

et al. 2005

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The structure of amorphous In x Se y ͑a-In x Se y ͒ alloys has been studied by a first principles tight-binding molecular dynamics technique. The three-dimensional amorphous structures with different densities at different compositions were prepared by quick quenching from the liquid phase. The characteristics of short-range order, namely radial distribution functions, coordination numbers, bond angle distribution functions, and the electronic structure have been analyzed. The local bonding environments of different In x Se y crystals ͑in particular, In 2 Se 3 , InSe, and In 4 Se 3 ͒ were found to be present in the amorphous phase. The average coordination number of indium is mainly four, whereas selenium is mostly two-or threefold coordinated. The majority of the bonds are heteropolar, but homopolar bonds are also present in a-In x Se y so that they cannot be excluded from a realistic description of the amorphous structure. Larger content of indium in a-In x Se y leads to an increased number of In-In bonds, as expected.

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STRUCTURE SIMILARITY AND LATTICE DYNAMICS OF InSe AND In_4Se_3 CRYSTALS

Cited by 12 publications

References 4 publications

Indium Deposited Nanosystem Formation on InSe (0001) Surface Applied as Template

Indium Deposited Nanosystem Formation on InSe (0001) Surface Applied as Template

Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides

ModelingIn−Seamorphous alloys

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