2013
DOI: 10.1016/j.egypro.2013.06.800
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Structure Properties of As-synthesized Cu-doped ZnO Nanopowder Synthesized by Co-precipitation Method

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Cited by 42 publications
(10 citation statements)
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“…The peaks at 330, 380 and 578 cm −1 can be attributed to E 2 (high)-E 2 (low), A1(TO) and A1(LO) modes, respectively. The peak at 436 cm −1 can be attributed to Raman active modes of E 2 (high), which represents the wurtzite hexagonal structure of ZnO [31,32]. This is in accordance with the XRD pattern of pristine ZnO.…”
Section: Methodssupporting
confidence: 83%
“…The peaks at 330, 380 and 578 cm −1 can be attributed to E 2 (high)-E 2 (low), A1(TO) and A1(LO) modes, respectively. The peak at 436 cm −1 can be attributed to Raman active modes of E 2 (high), which represents the wurtzite hexagonal structure of ZnO [31,32]. This is in accordance with the XRD pattern of pristine ZnO.…”
Section: Methodssupporting
confidence: 83%
“…Both A 1 and E 1 modes are Raman and IR active modes. The E 2 mode is a non-polar phonon and active with Raman only, meanwhile B 1 mode is Raman and IR inactive mode [26]. The Raman line of the E 2 (high) mode becomes broad and weaker, which means that the wurtzite crystalline structure of ZnO is weakened by high Cu doping.…”
Section: Raman Spectramentioning
confidence: 98%
“…Where I ph is the photocurrent, I dark is the dark current and P opt is the optical power of the UV source, c, e and  are represented blank constant, light speed, electron charge and wavelength used, respectively. According to the relations (5)(6)(7)(8), the results can be found in Table3, at a wavelength of 365, 385 nm is as a function applied voltage.…”
Section: Characteristic Of the Uv Detectormentioning
confidence: 99%
“…Different doping in ZnO (i.e., Mg) can adjust bandgap to make UV photodetectors in different UV region. There were several reports focused on efforts to control the properties of ZnO by adding the transition metal impurities such as Al [3,4], Cu [5], Co [6], In [7], and Mg [3,8] Doping work to control and adjust the band gap, which greatly contribute to increase the efficiency and power, and in many applications, such as Light-emitting diodes [9], laser diodes [10], solar cells, transparent electrodes, thin film transistors and optical sensors [3,11]. The ZnO sensing mechanism is highly correlated with surface reactions hence; oxygen absorption, grain size, defects, and other parameters have an important effect in controlling the sensing response.…”
Section: Introductionmentioning
confidence: 99%