Structure of the Si(111)-Ca<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">F</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Interface

Tromp, R. M.; Reuter, M. C.

doi:10.1103/physrevlett.61.1756

Cited by 172 publications

(42 citation statements)

References 9 publications

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“…1͒. 27 Furthermore, x-ray standing-wave ͑XSW͒ studies confirmed Ca adsorption on T 4 site for CaF submonolayers deposited at high temperature. 28 Klust et al showed by means of XSW that Ca also adsorbs on T 4 sites for low deposition temperatures.…”

Section: Introductionmentioning

confidence: 86%

“…1͒ as previously determined by different experimental techniques. 27,28,41 Secondly, the vertical distance between the Ca atoms of the CaF interface layer and the topmost Si atom of the Si bilayer located at the interface is d int = 255͑Ϯ7͒ pm while, thirdly, the upper Si half of the top Si bilayer shifts 5 pm towards the CaF 2 film with respect to the Si bulk values and, fourthly, the vertical distance between the Ca atoms of the CaF interface layer and the Ca atoms of the first CaF 2 layer is expanded ͓d CaF-CaF 2 = 334͑Ϯ8͒ pm͔ with respect to the vertical lattice constant c psm of the pseudomorphic CaF 2 phase.…”

Section: B Out-of-plane (Ctr) Analysismentioning

confidence: 99%

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Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

et al. 2010

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The structure and morphology of ultrathin lattice matched CaF 2 films of very few monolayers thickness, which were deposited on Si͑111͒ substrates by molecular-beam epitaxy, have been studied in situ by synchrotron based grazing incidence x-ray diffraction. Even for the thinnest investigated film of three monolayers thickness, the in-plane structure of the CaF 2 film is determined by a lateral separation in two domains: a pseudomorphic phase assuming the lateral lattice constant of the Si͑111͒ substrate and a completely relaxed phase. Analysis of the crystal truncation rods verifies that both phases adopt the entire homogeneous CaF 2 film thickness. Therefore, we propose that atomic steps of the substrate bypass the nucleation barrier for the formation of ͑Shockley partial͒ dislocations so that the film starts to relax below the classical critical film thickness. While the relaxed phase assumes also the CaF 2 bulk lattice constant for the vertical direction, the vertical lattice constant of the pseudomorphic phase increases due to the compressive lateral strain at the interface. This vertical expansion of the pseudomorphic phase, however, is larger than expected from the elastic constants of the CaF 2 bulk. The fraction of the pseudomorphic CaF 2 phase decreases with increasing film thickness. The interface between the pseudomorphic CaF 2 phase and the Si͑111͒ substrate is characterized by Ca on T 4 sites, a smaller distance between the Si͑111͒ substrate and the CaF interface layer and an expanded layer distance between CaF interface layer and the completely stoichiometric CaF 2 film.

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Section: Introductionmentioning

confidence: 86%

Section: B Out-of-plane (Ctr) Analysismentioning

confidence: 99%

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

et al. 2010

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“…For chemical modification of the clean Si͑111͒ surface, we choose to grow a CaF 2 layer because of the close match of the lattice constant between deposit and substrate as well as the insulating nature of CaF 2 . 7,8 The CaF 2 growth is conducted at a substrate temperature of 610°C at a growth rate of ϳ20 Å/min. 10 s annealing at 830°C is followed to form a Si-Ca-F interface layer with CaF 1 stoichiometry, where the Ca atoms bond to Si.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…7 By growing 1-2 ML CaF 2 , the CaF 2 stripes are formed at the upper step edges in regular arrays, covering the CaF 1 /Si͑111͒ interface. 7,8 STM images are taken typically with a sample voltage of ϩ4 V and tunneling current of 0.4 nA. The positive sample voltage of 4 V leads to electron tunneling from the tip directly into the conduction band of CaF 2 .…”

Section: Experimental Methodsmentioning

confidence: 99%

“…The factors controlling this effect have been discussed in previous studies. 7,8 After the substrate is exposed to nickelocene vapor at room temperature followed by a brief high temperature annealing, the upper step edge is decorated by a string of adsorbates guided by the steps. Voids in the CaF 2 layer expose the underlying CaF 1 /Si͑111͒ interface.…”

Section: Adsorption Site Selectivitymentioning

confidence: 99%

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Selective adsorption of metallocenes on clean and chemically modified Si(111) surfaces

Lin

Rauscher

Kirakosian

et al. 1999

Journal of Applied Physics

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Metallocene adsorption on clean Si͑111͒ and CaF 2 /CaF 1 /Si͑111͒ substrates has been investigated with scanning tunneling microscopy. The surface chemical composition is found to strongly change the adsorption site selectivity, leading to an enhanced edge selectivity on modified substrates. Templates with well-defined local chemical reactivity have been created via self-assembly. The selective adsorption of metallocenes on such tailored substrates facilitates patterning ordered arrays of magnetic nanowires and stripes on the single digit nanometer scale.

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