Structure of the Si{100} surface in the clean (2×1), (2×1)-H monohydride, (1×1)-H dihydride, andc(4×4)-H phases

HREELS, STM, and LEED studies of theSi(100)−c(4×4)surface at 100 andHossain1, Kato2, Kawai3 2006Phys. Rev. B5110View full textAdd to dashboardCite

“…Numerous methods, such as Si deposition, 1-3 B deposition, [4][5][6] O or S treatment, [7][8][9] Ge deposition, 10 C deposition, [11][12][13][14][15][16] H exposure, [17][18][19][20][21][22][23] Bi deposition, 24 hydrocarbon treatment and vacuum annealing [25][26][27][28][29][30][31][32][33][34][35][36][37] have been reported for preparation of the Si͑100͒-c͑4 ϫ 4͒ surface. Among these diversified methods for preparation of the Si͑100͒-c͑4 ϫ 4͒ surface, the sample annealing at 900-1000 K for a few minutes to several hours is a common procedure in all of the studies.…”

STM study of the C-inducedSi(100)−c(4×4)reconstruction

“…[13][14][15][16][17][18][19] In the Si-MBE and Si x H y experiments growth changes the surface structure over time. 1,2,4,5,[25][26][27][28][29] The hydrocarbon compounds (C 2 H 4 and C 2 H 2 ) crack at Si surfaces at elevated temperatures and leaves atomic hydrogen to modify the surface.…”

“…This was reproduced by Sakamoto et al, 2 and later Müller et al 3 reported that this reconstruction also appeared when a clean Si͑100͒ surface was annealed in vacuum. It turns out that this reconstruction has been formed with a wealth of methods; Si deposition, 1,2,4,5 C deposition, [6][7][8][9][10][11] Ge deposition, 12 H exposure, [13][14][15][16][17][18][19] C 2 H 4 and C 2 H 2 treatment, 20-24 SiH 4 /Si 2 H 6 growth, [25][26][27][28][29] annealing in vacuum, 3,[30][31][32][33][34][35][36] B deposition, [37][38][39] and O or S treatment. [40][41][42] Several models for the reconstruction have been proposed: Pandey's -bonded defect model, 30,43 missing dimer, 9,13 parallel ad-dimer, 15 and mixed ad-dimer 15 models, and it has been debated whether it is a pure Si reconstruction or if it contains any foreign species.…”

A model for low temperature interface passivation between amorphous and crystalline silicon

“…In particular, thermal annealing was shown to improve the surface state configurations, where the surface states were also found to relax during annealing, likely by lowering the adsorption barrier. 20,21 Indeed, the energy required to flip an asymmetric Si-dimer into a suitable configuration for hydrogen adsorption is only 0.1 eV for Si h100i, 22 slow and cannot be forced by incident hydrogen during deposition. 23 The relatively high deposition rate (4 Å s À1 ) of our earlier, low temperature work gave insufficient time for the Si surface to reconfigure ideally for hydrogen adsorption.…”