A comparison has been made of the compression creep characteristics of samples of reaction-bonded and hot-pressed silicon nitride, a sialon and silicon carbide. In addition, the effects of factors such as oxide additions and fabrication variables on the creep resistance of reaction-bonded material and the influence of dispersions of SiC particles on the creep properties of hot-pressed silicon nitride have been considered. For the entire range of materials examined, the creep behaviour appears to be determined primarily by the rate at which the development of grain boundary microcracks allows relative movement of the crystals to take place.