1999
DOI: 10.1016/s0921-5093(99)00030-1
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Structure of silicon processed by severe plastic deformation

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Cited by 57 publications
(21 citation statements)
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“…These surface defects are also present on an as prepared por Si sample but have more clear boundaries and structure [5]. The as pre The average size of the 3C-SiC quantum dots forming on the surface of quantum silicon wires was estimated using Raman spectra [10]. It is interesting that the spectrum of SiC with a maximum at 970 cm -1 , which coincides with the position of the well known LO mode of silicon carbide [11], undergoes substantial changes during measurements, whereas the character istics of the silicon band remain unchanged.…”
Section: Experimental Results For the Carbonization Of Nanoporous Silmentioning
confidence: 99%
“…These surface defects are also present on an as prepared por Si sample but have more clear boundaries and structure [5]. The as pre The average size of the 3C-SiC quantum dots forming on the surface of quantum silicon wires was estimated using Raman spectra [10]. It is interesting that the spectrum of SiC with a maximum at 970 cm -1 , which coincides with the position of the well known LO mode of silicon carbide [11], undergoes substantial changes during measurements, whereas the character istics of the silicon band remain unchanged.…”
Section: Experimental Results For the Carbonization Of Nanoporous Silmentioning
confidence: 99%
“…[124] Because such high-pressure phases are semi-metallic in nature, they are more likely to deform plastically at room temperature under high pressure. An early study [125] and more recent studies [126,127] reported the formation of nanograins in crystalline Si processed by HPT. The mechanism for the nanograin formation is not understood but it is probably associated with enhanced dislocation activity or transformation-induced grain refinement.…”
Section: Mg and Mgmentioning
confidence: 99%
“…[4][5][6][7][8][9][10] It is well known that the grain refinement to the submicrometer and/or nanometer range is achieved using the process of severe plastic deformation (SPD). [11] Although several processes are available for the SPD, [12,13] the process under high pressure, known as high-pressure torsion (HPT), [14][15][16] is effective for the grain refinement in hard and less ductile materials even such as intermetallics, [17][18][19][20][21][22] semiconductors, [23][24][25][26] and ceramics. [27,28] The sample for the HPT processing is used in a form of disk [14] or ring [29][30][31] and it may be extended to ribbons or wires if they are processed in a continuous way using continuous HPT (CHPT).…”
mentioning
confidence: 99%