Structure of Silicene Grown on Ag(111)

Lin, Chun Liang; Arafune, Ryuichi; Kawahara, Kazuaki; Tsukahara, N.; Minamitani, Emi; Kim, Yousoo; Takagi, Noriaki; Kawai, Maki

doi:10.1143/apex.5.045802

Cited by 604 publications

(635 citation statements)

References 20 publications

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“…Except for a buckling, the structure and electronic states of these two materials are similar to graphene, although the band gap is larger and tunable [8,9]. However, the fabrication remains a major challenge despite many efforts [6,[10][11][12]. Recently, ML Sn, the next element in this group of the periodic table, and functionalized ML Sn have been predicted to be large-gap quantum spin Hall [13] and quantum anomalous Hall insulators [14], respectively.…”

Section: Introductionmentioning

confidence: 99%

Emergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb

Zhang

Schwingenschlögl

2016

Phys. Rev. B

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Using first-principles calculations, we investigate the electronic and vibrational properties of monolayer As and AsSb. While the pristine monolayers are semiconductors (direct band gap at the point), fluorination results in Dirac cones at the K points. Fluorinated monolayer As shows a band gap of 0.16 eV due to spin-orbit coupling, and fluorinated monolayer AsSb a larger band gap of 0.37 eV due to inversion symmetry breaking. Spin-orbit coupling induces spin splitting similar to monolayer MoS 2 . Phonon calculations confirm that both materials are dynamically stable. Calculations of the edge states of nanoribbons by the tight-binding method demonstrate that fluorinated monolayer As is topologically nontrivial in contrast to fluorinated monolayer AsSb.

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Section: Introductionmentioning

confidence: 99%

Emergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb

Zhang

Schwingenschlögl

2016

Phys. Rev. B

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“…While the spin-polarization is generated by spin-orbit coupling (SOC), the entanglement between spin and orbital degrees of freedom due to the SOC significantly reduces the degree of spin-polarization of spin-split states in most non-magnetic semiconductors including the topological insulators 4 . Recently, silicene, a close relative of graphene 5 , has been predicted and synthesized [6][7][8][9][10][11][12][13][14][15][16] . The band structure of silicene is similar to that of graphene in that the conduction and valence edges occur at the corners (K and K' points) of the Brillouin zone (BZ).…”

mentioning

confidence: 99%

Gated silicene as a tunable source of nearly 100% spin-polarized electrons

et al. 2013

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Silicene is a one-atom-thick two-dimensional crystal of silicon with a hexagonal lattice structure that is related to that of graphene but with atomic bonds that are buckled rather than flat. This buckling confers advantages on silicene over graphene, because it should, in principle, generate both a band gap and polarized spin-states that can be controlled with a perpendicular electric field. Here we use first-principles calculations to show that field-gated silicene possesses two gapped Dirac cones exhibiting nearly 100% spin-polarization, situated at the corners of the Brillouin zone. Using this fact, we propose a design for a silicene-based spin-filter that should enable the spin-polarization of an output current to be switched electrically, without switching external magnetic fields. Our quantum transport calculations indicate that the proposed designs will be highly efficient (nearly 100% spin-polarization) and robust against weak disorder and edge imperfections. We also propose a Y-shaped spin/valley separator that produces spin-polarized current at two output terminals with opposite spins.

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“…As can be seen from figures 10(a)-10(c), the amplitudes of G ησ oscillations are strongly suppressed, as compared to figure 9. This behaviour arises from the fact that by increasing the exchange field h/E from 1.6 to 4.5, the component of the wave vector along the x-axes in the ferromagnetic regions (k x ) increases, see equation (4). Note that increasing h does not have any effect on the amplitude of the gap.…”

Section: B Valley and Spin-resolve Conductancementioning

confidence: 99%

“…[1][2][3][4][5][6] In silicene the low-energy excitations are governed by the Dirac equation near the K and K ′ points. 7,8 In contrast to graphene, 9 silicene has a large spin-orbit coupling and due to the low-buckled geometry, its energy gap can be further tuned by an external electric field perpendicular to the silicene sheet.…”

Section: Introductionmentioning

confidence: 99%

Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

Hajati

Rashidian

2016

AIP Advances

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We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF) silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.

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Structure of Silicene Grown on Ag(111)

Cited by 604 publications

References 20 publications

Emergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb

Emergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb

Gated silicene as a tunable source of nearly 100% spin-polarized electrons

Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

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