Structure of quench condensed Ge-metal alloys

Krapp, M.; Lambrecht, A.; Hasse, J.

doi:10.1007/bf01307772

Cited by 12 publications

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References 21 publications

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“…From previous studies of Ge 1−x Al x thin films, we have obtained the following information. Ge-rich (x < 0.3) alloy film prepared by vacuum co-evaporation at room temperature [1][2][3][4][5] is amorphous and single phase. Al-rich alloy film (0.4 < x < 0.9) [6][7][8] shows aluminium crystals in an amorphous Ge-Al matrix.…”

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Optical properties of amorphous films assembled from the nanoclusters of Ge - Al mixtures

Miao

Hong

Chen

et al. 1997

J. Phys.: Condens. Matter

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Two samples of nanocluster-assembled Ge - Al thin films on quartz substrates have been fabricated by co-evaporation and inert-gas condensation. The thin films are amorphous and single phase, and the mean diameters of the nanoclusters are and , respectively. The composition of the nanoclusters in the two films is about 98.7 at.% Ge and 1.3 at.% Al, and the ratio of Ge and oxygen atoms is 1:1.8 (O). From the absorption spectra of the two samples, we estimate the optical gaps to be about 2.8 eV and 1.6 eV from Tauc plots, respectively; these are dependent on the nanocluster sizes and are much larger than those of vacuum-evaporated amorphous Ge and amorphous Ge - Al thin films. Under 3.32 eV (374 nm) excitation, photoluminescence (PL) peaks at 2.80 and 3.00 eV appear for the thin film with the mean diameter of the nanoclusters ; these can be interpreted as manifesting electron transitions from the optical gap (2.8 eV) and mobility gap (3.0 eV). In the absorption spectra of the two samples, a shoulder peak appears at 5.06 eV (245 nm), corresponding to the absorption band of one of the germanium oxygen-deficient centres (GODCs), namely GODC-1. The PL peak at 3.10 eV (400 nm), which arises from GODC-1, is also observed for the two samples.

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confidence: 99%

Optical properties of amorphous films assembled from the nanoclusters of Ge - Al mixtures

Miao

Hong

Chen

et al. 1997

J. Phys.: Condens. Matter

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Electronic properties and superconductivity of amorphous Si_1‐xAu_x alloys near the metal‐insulator transition

Fischer

Löhneysen

1993

Annalen der Physik

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Abstract. We report on specific-heat and resistivity measurements on quench-condensed Si, -,Au, films for 0.1 1 GxGO.36 in the temperature range 0.35 K G T G 6 K. A distinct increase of the specificheat derived electronic density of states at the Fermi level is observed at xb = 0.2, i.e, in the vicinity of the metal-insulator transition occurring for our samples at X, = 0.16. This suggests a different type of bonding between Au and Si for xxb. While resistive transitions to superconductivity are observed for ~2 0 . 2 1 , the absence of a specific-heat anomaly at the transition points to filamentary superconductivity except for x = 0.35 where a sizable anomaly is seen. The difference in various electronic properties between differently prepared samples of these metastable alloys, in particular the influence of different preparation and annealing temperatures is emphasized. It is suggested that these differences are caused by incipient phase separation in the room-temperature prepared samples.

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84Zha2 - 88Sue1

Flükiger¹,

Wolf²

Ac - Na

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Structure of quench condensed Ge-metal alloys

Cited by 12 publications

References 21 publications

Optical properties of amorphous films assembled from the nanoclusters of Ge - Al mixtures

Optical properties of amorphous films assembled from the nanoclusters of Ge - Al mixtures

Electronic properties and superconductivity of amorphous Si_1‐xAu_x alloys near the metal‐insulator transition

84Zha2 - 88Sue1

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Structure of quench condensed Ge-metal alloys

Cited by 12 publications

References 21 publications

Optical properties of amorphous films assembled from the nanoclusters of Ge - Al mixtures

Optical properties of amorphous films assembled from the nanoclusters of Ge - Al mixtures

Electronic properties and superconductivity of amorphous Si1‐xAux alloys near the metal‐insulator transition

84Zha2 - 88Sue1

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Electronic properties and superconductivity of amorphous Si_1‐xAu_x alloys near the metal‐insulator transition