Structure of nanoindentations in heavily n- and p-doped (001) GaAs

Bourhis, E. Le; Patriarche, G.

doi:10.1016/j.actamat.2007.11.036

Cited by 13 publications

(10 citation statements)

References 42 publications

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“…Data available in the literature show dislocation generation as the cause of incipient plasticity in GaAs and InP crystals. Indeed, microscopic analysis of the plastically deformed volume around the residual impression shows complex displacement patterns [7,8], never revealing a trace of metallic, high-pressure phases. Raman spectra collected from a pristine surface of InP and compared to those obtained at the center of an indent is an example of such investigation [9].…”

Section: Ofmentioning

confidence: 99%

Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

et al. 2019

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In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn- and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.

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Section: Ofmentioning

confidence: 99%

Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

et al. 2019

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“…They also demonstrated the effect of the alloying element on the long-distance dislocation mobility, which affects the macroscopic hardness rather than the local dislocation nucleation. Le Bourhis and Patriarche investigated the doping effect of n- and p-type dopants for GaAs [ 130 ]. No dopant type remarkably affected the pop-in critical load, while the dislocation structure in the rosette arm was different with the different mobilities of the screw dislocations.…”

Section: Effect Of Pre-existing Lattice Defectsmentioning

confidence: 99%

Pop-In Phenomenon as a Fundamental Plasticity Probed by Nanoindentation Technique

Ohmura

Wakeda

2021

Materials

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The attractive strain burst phenomenon, so-called “pop-in”, during indentation-induced deformation at a very small scale is discussed as a fundamental deformation behavior in various materials. The nanoindentation technique can probe a mechanical response to a very low applied load, and the behavior can be mechanically and physically analyzed. The pop-in phenomenon can be understood as incipient plasticity under an indentation load, and dislocation nucleation at a small volume is a major mechanism for the event. Experimental and computational studies of the pop-in phenomenon are reviewed in terms of pioneering discovery, experimental clarification, physical modeling in the thermally activated process, crystal plasticity, effects of pre-existing lattice defects including dislocations, in-solution alloying elements, and grain boundaries, as well as atomistic modeling in computational simulation. The related non-dislocation behaviors are also discussed in a shear transformation zone in bulk metallic glass materials and phase transformation in semiconductors and metals. A future perspective from both engineering and scientific views is finally provided for further interpretation of the mechanical behaviors of materials.

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“…Defects refer to the imperfect arrangement of atoms in a single crystal, which might be induced during crystal growth [24][25][26] or by the deformation caused by mechanical loading [17,[27][28][29]. The defects can be briefly categorized as point defects (vacancy , interstitial defects, and impurities), line defects (dislocations), planar defects (stacking faults, twinnings, and grain boundaries), and volume defects (voids, cracks, and amorphization) [30].…”

Section: Crystal Defectsmentioning

confidence: 99%

“…Thus, it is expected that the deformation mechanism of GaAs is different from that of Si. The nanoindentation studies on the deformation mechanism of GaAs were mainly focused on the (001) crystal plane [29,38,[76][77][78][79][80]. Those studies used different indenters including Berkovich [81,82], Vickers [18,76,83], and spherical diamond tips [84][85][86].…”

Section: Nanoindentation Induced Deformationmentioning

confidence: 99%

Deformation and removal of semiconductor and laser single crystals at extremely small scales

Huang

2020

Int. J. Extrem. Manuf.

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Semiconductor and laser single crystals are usually brittle and hard, which need to be ground to have satisfactory surface integrity and dimensional precision prior to their applications. Improvement of the surface integrity of a ground crystal can shorten the time of a subsequent polishing process, thus reducing the manufacturing cost. The development of cost-effective grinding technologies for those crystals requires an in-depth understanding of their deformation and removal mechanisms. As a result, a great deal of research efforts were directed towards studying this topic in the past two or three decades. In this review, we aimed to summarize the deformation and removal characteristics of representative semiconductor and laser single crystals in accordance with the scale of mechanical loading, especially at extremely small scales. Their removal mechanisms were critically examined based on the evidence obtained from high-resolution TEM analyses. The relationships between machining conditions and removal behaviors were discussed to provide a guidance for further advancing of the grinding technologies for those crystals.

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Structure of nanoindentations in heavily n- and p-doped (001) GaAs

Cited by 13 publications

References 42 publications

Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

Pop-In Phenomenon as a Fundamental Plasticity Probed by Nanoindentation Technique

Deformation and removal of semiconductor and laser single crystals at extremely small scales

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