Structure of GaAs(001)<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>4</mml:mn><mml:mo>)</mml:mo><mml:mo>−</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>8</mml:mn><mml:mo>)</mml:mo></mml:math>Determined by Scanning Tunneling Microscopy

Pashley, M. D.; Haberern, K. W.; Friday, William A.; Woodall, J. M.; Kirchner, P. D.

doi:10.1103/physrevlett.60.2176

Cited by 554 publications

(121 citation statements)

References 15 publications

Supporting

Mentioning

111

Contrasting

Unclassified

Order By: Relevance

“…The observed PL displays the well known two band behavior of the ZnSeTe system [18][19][20]. The shoulder around 2.6 -2.75eV (A) is generally accepted to be the result of recombination from excitons bound to pairs of Teatoms [16,20], which substitute isoelectronically for Se-atoms along specific crystal directions [21]. The feature at ~2.79eV (D) is related to free excitons in the alloyed Zn(Te)Se matrix [16], while the dominant feature around 2.5eV (B) has been historically attributed to the contribution of clusters of larger numbers of these isoelectronic centers.…”

mentioning

confidence: 84%

Aharonov-Bohm Excitons at Elevated Temperatures in Type-IIZnTe/ZnSeQuantum Dots

et al. 2008

View full text Add to dashboard Cite

Optical emission from type-II ZnTe/ZnSe quantum dots demonstrates large and persistent oscillations in both the peak energy and intensity indicating the formation of coherently rotating states. Furthermore, the Aharanov-Bohm (AB) effect is shown to be remarkably robust and persists until 180K. This is at least one order of magnitude greater than the typical temperatures in lithographically defined rings. To our knowledge this is the highest temperature at which the AB effect has been observed in semiconductor structures.

show abstract

mentioning

confidence: 84%

Aharonov-Bohm Excitons at Elevated Temperatures in Type-IIZnTe/ZnSeQuantum Dots

et al. 2008

View full text Add to dashboard Cite

show abstract

“…³ÑÅÎÂÔÐÑ àÕÑÌ AEËÂÅÓÂÏÏÇ àÐÇÓÅÇÕËÚÇÔÍËÌ ÖÓÑÄÇÐß ÑÃÑÓÄÂÐÐÑÌ ÔÄâÊË As ÎÇÉËÕ ÐËÉÇ ÏÂÍÔËÏÖÏÂ ÄÂÎÇÐÕÐÑÌ ÊÑÐÞ Ë AEÑÎÉÇÐ ÃÞÕß ÊÂÒÑÎÐÇÐ, Â àÐÇÓÅÇÕËÚÇÔÍËÌ ÖÓÑÄÇÐß ÑÃÑÓ-ÄÂÐÐÑÌ ÔÄâÊË Ga ÎÇÉËÕ ÐÂAE ÏËÐËÏÖÏÑÏ ÊÑÐÞ ÒÓÑÄÑAEË-ÏÑÔÕË Ë AEÑÎÉÇÐ ÃÞÕß ÒÖÔÕÞÏ. ¹ÇÕÞÓÇØÍÓÂÕÐÖá 4Â ÒÇÓËÑAEËÚÐÑÔÕß ÄAEÑÎß ÐÂÒÓÂÄÎÇÐËâ h110i ÏÑÉÐÑ ÃÞÎÑ ÒÑÒÞÕÂÕßÔâ ÑÃÝâÔÐËÕß ÐÂ ÑÔÐÑÄÇ ÒÓÇAEÒÑÎÑÉÇÐËâ ÑÃ ÂÔËÏÏÇÕÓËË AEËÏÇÓÑÄ As [26,27], ÐÑ ¹ÂAEË ÄÞAEÄËÐÖÎ ËAEÇá "ÄÂÍÂÐÔËË AEËÏÇÓÑÄ As" [44], ÒÑAEÕÄÇÓÉAEÇÐÐÖá ÒÑÊÉÇ àÍÔÒÇÓËÏÇÐÕÂÎßÐÑ Ô ÒÑÏÑÜßá ³´® [35].°ÃÓÂ-ÊÑÄÂÐËÇ ÄÂÍÂÐÔËÌ AEËÏÇÓÑÄ ÓÂÔÔÏÂÕÓËÄÂÎÑÔß ËÏ ÍÂÍ ÔÒÑÔÑÃ ËÊÃÇÉÂÕß ÄÑÊÏÑÉÐÑÅÑ ÐÂÍÑÒÎÇÐËâ ÊÂÓâAEÂ, ÚÕÑ àÐÇÓÅÇÕËÚÇÔÍË ÐÇÄÞÅÑAEÐÑ [12]. ±ÓÑÔÕÇÌÛÂâ ÔÕÓÖÍÕÖÓÂ àÎÇÏÇÐÕÂÓÐÑÌ âÚÇÌÍË 2 Â 4, ÒÑÊÄÑÎâáÜÂâ ÔÑØÓÂÐËÕß àÎÇÍÕÓËÚÇÔÍÖá ÐÇÌÕÓÂÎßÐÑÔÕß, ÏÑÉÇÕ ÃÞÕß ÒÑÎÖÚÇÐÂ ÒÑÔÎÇ ÖAEÂÎÇÐËâ ÒÑ ÑAEÐÑÏÖ ËÊ ÍÂÉAEÞØ ÚÇÕÞÓÇØ AEËÏÇÓÑÄ As [50].…”

Section: ¡õñïðþç ôõóöíõöóþ ðâ òñäçóøðñôõë åóâðë Gaas(001)unclassified

“…¢ÇÔÔÒÑÓÐÑÇ ÒÑAEÕÄÇÓÉAEÇÐËÇ As-ÄÂÍÂÐÔËÑÐÐÑÌ ÏÑAEÇÎË ×ÂÊÞ 2 Â 4 ÃÞÎÑ ÒÑÎÖÚÇÐÑ Ä ÓÇÊÖÎßÕÂÕÇ ÒÇÓÄÞØ ÉÇ ³´®-ÐÂÃÎáAEÇÐËÌ, ÒÓÑÄÇAEÇÐÐÞØ ±ÂÛÎË Ô ÔÑÕÓÖAEÐËÍÂÏË [35]. £ ËØ àÍÔÒÇÓËÏÇÐÕÂØ ÑÃÓÂÊÙÞ ÒÓËÅÑÕÑÄÎâÎË Ä ÑÕAEÇÎßÐÑ ÓÂÔÒÑÎÑÉÇÐÐÑÌ ÍÂÏÇÓÇ ®¿, Â ÒÇÓÇAE ËÊÄÎÇÚÇÐËÇÏ ÐÂ ÄÑÊAEÖØ ÒÑÍÓÞÄÂÎË ÊÂÜËÕÐÞÏ ÂÏÑÓ×ÐÞÏ ÔÎÑÇÏ As Ë ÒÇÓÇÐÑÔËÎË Ä ³´® ÍÂÏÇÓÖ, ÒÑÔÎÇ ÚÇÅÑ ÒÑÍÓÞÕËÇ ÖAEÂÎâÎË Ô ÒÑÏÑÜßá ÍÓÂÕÍÑÄÓÇÏÇÐÐÑÅÑ ÒÓÑÅÓÇÄÂ.…”

Section: ¡õñïðþç ôõóöíõöóþ ðâ òñäçóøðñôõë åóâðë Gaas(001)unclassified

“…1Â). ±ÑÊÉÇ ¢ËÅÇÎßÔÇÐ Ô ÔÑÕÓÖAEÐËÍÂÏË ÔÖÏÇÎË ÒÓËÅÑÕÑÄËÕß ÑÃÓÂÊÙÞ in situ Ä ÍÂÏÇÓÇ ®¿ Ë ÔÑÑÃÜËÎË, ÚÕÑ àÎÇÏÇÐÕÂÓÐÂâ âÚÇÌÍÂ ÔÕÓÖÍÕÖÓÞ 2 Â 4 ÄÐÇÛÐÇÅÑ ÒÑÄÇÓØÐÑÔÕÐÑÅÑ ÔÎÑâ ÔÑÔÕÑËÕ ËÊ ÕÓÇØ AEËÏÇÓÑÄ As [36], ÒÑAEÕÄÇÓAEËÄ ÕÇÏ ÔÂÏÞÏ ÐÂÃÎáAEÇÐËâ [35].°AEÐÂÍÑ Ä ÕÇØ ÔÎÖÚÂâØ, ÍÑÅAEÂ ÑÃÓÂÊÙÞ ÑÕÉËÅÂÎËÔß Ä ÕÇÚÇÐËÇ ÃÑÎÇÇ ÒÓÑAEÑÎÉËÕÇÎßÐÑÅÑ ÒÓÑÏÇÉÖÕÍÂ ÄÓÇÏÇÐË ËÎË ÒÓË ÃÑÎÇÇ ÄÞÔÑÍËØ ÕÇÏÒÇÓÂÕÖÓÂØ, ÎËÃÑ ÄÞÓÂÜËÄÂÎËÔß ÒÓË ÏÇÐß-ÛËØ ÊÐÂÚÇÐËâØ ÑÕÐÑÛÇÐËâ ÍÑÐÙÇÐÕÓÂÙËÌ [As 4 ]a[Ga] Ä ÒÑÕÑÍÂØ, ÑÐË ÐÂÃÎáAEÂÎË ÔÕÓÖÍÕÖÓÖ 2 Â 4, ÐÑ ÔÑÔÕÑâÜÖá ËÊ AEÄÖØ AEËÏÇÓÑÄ As ÄÑ ÄÐÇÛÐÇÏ ÒÑÄÇÓØÐÑÔÕÐÑÏ ÔÎÑÇ [36].…”

Section: ¡õñïðþç ôõóöíõöóþ ðâ òñäçóøðñôõë åóâðë Gaas(001)unclassified

See 1 more Smart Citation

Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy

Bakhtizin¹,

Xue²,

Hashizume³

et al. 1997

Usp. Fiz. Nauk

View full text Add to dashboard Cite

“…Horikoshi et al (1989) have drawn attention to scanning tunnelling microscopy results (Pashley et al 1988) which show that the normal2x4 growth reconstruction is caused by an array of missing As dimers and NGa(2x4) < o· 75Ns. Their explanation is that though the surface site density for the surface is only three quarters of what it was originally thought, to build a bulk layer still requires Ns Ga atoms.…”

Section: T[o:1) [110)mentioning

confidence: 99%

The Growth of Semiconductor Thin Films Studied by RHEED

Price¹

1990

Aust. J. Phys.

View full text Add to dashboard Cite

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

show abstract

Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy

Cited by 554 publications

References 15 publications

Aharonov-Bohm Excitons at Elevated Temperatures in Type-IIZnTe/ZnSeQuantum Dots

Aharonov-Bohm Excitons at Elevated Temperatures in Type-IIZnTe/ZnSeQuantum Dots

Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy

The Growth of Semiconductor Thin Films Studied by RHEED

Contact Info

Product

Resources

About