Structure of Evaporated Metal Films

Sanders, J. V.

doi:10.1016/b978-0-12-058001-9.50006-7

Cited by 17 publications

(9 citation statements)

References 69 publications

(28 reference statements)

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“…thickness dependence of R. This is to be compared with the strong thickness dependence of R observed for the Fe-Pd system where interdiffusion was shown to be relatively slow (16). Systems with slower interdiffusion rates are expected to be more porous (26), because, during the growth state, gaps formed between crystals when they touch or overlap cannot be filled in. For extremely porous films, the gap density and thus the total surface area increases linearly with film thickness (27).…”

Section: Discussionmentioning

confidence: 92%

Effects of Oxidation on the Atmospheric Corrosion of Permalloy Films

Lee

Scherer

Guarnieri

1979

J. Electrochem. Soc.

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Auger electron spectroscopy, x-ray photoelectron spectroscopy, and ion sputtering techniques were used to analyze the oxide formed on the surfaces of 10O0A thick, e-beam deposited Permalloy films. These films were oxidized under 1 atm 02 pressure and at temperatures between 160 ~ and 250~ Fe is found to preferentially oxidize to Fe203 on the outermost surface with Ni enrichment uniformly distributed throughout the entire unoxidized portion of the alloy. Oxide growth follows a parabolic rate law, and the activation energy of oxidation is estimated to be ~0.5 eV. Corrosion characteristics of Permalloy thin films are quite sensitive to the nature of the surface oxide layer. Proper postoxidation treatments have proven to be effective in increasing their atmospheric corrosion resistance. This is interpreted in terms of the formation of a hydrated Fe~O3 layer with relatively small defect density.* Electrochemical Society Active Member. 1 Work carried out while on leave from Fritz Haber Institut tier MPG,

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Section: Discussionmentioning

confidence: 92%

Effects of Oxidation on the Atmospheric Corrosion of Permalloy Films

Lee

Scherer

Guarnieri

1979

J. Electrochem. Soc.

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“…It consists in the selection of crystals with the fastest growth rates perpendicular to the substrate, which is governed by the principle of "survival of the fastest". This growth is also characterized in the structural zone model proposed by J. V. Sanders [13], which states that the temperature range 0.1 < synthesis temperature/melting temperature < 0.3 corresponds to the conditions when surface diffusion becomes noticeable and as a result, a column-like structure with impermeable boundaries is formed.…”

Section: Resultsmentioning

confidence: 78%

MORPHOLOGICAL, OPTICAL PROPERTIES AND ELECTRONIC STRUCTURE OF ZnO THIN FILMS DOPED WITH ALUMINUM

Zaika,

Shvachko

2024

Sens. elektron. mìkrosist. tehnol.

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This paper presents the results of investigation of aluminum-doped zinc oxide thin films obtained by radio-frequency magnetron deposition on a glass substrate. It was shown by energy dispersion X-ray spectroscopy that the average aluminum content in the thin films was 0.2–0.8 at.%. An increase in the average grain size with increasing aluminum concentration was shown, and column-like growth of the films was established using microscopic images. Investigation of the electronic structure showed a redistribution of intensity in the O 1s spectrum with aluminum doping. The valence band spectra were also obtained, and theoretical calculations were performed within the framework of density functional theory to better understanding the results. Using a spectrophotometer, the transparency of the films obtained after aluminum doping was shown to increase. With the help of the Tauc method, the band gap was determined to be 3.41 eV, while DFT calculations showed a band gap of 1.25 eV.

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“…Thornton [71] generalized the models proposed by Sanders [72] and Movchan and Demschishin [73] to relate thin-film microstructures to the substrate temperature and the melting point of the material. Thornton [71] generalized the models proposed by Sanders [72] and Movchan and Demschishin [73] to relate thin-film microstructures to the substrate temperature and the melting point of the material.…”

Section: Thin-film Deposition Methodsmentioning

confidence: 99%