Structure, morphology and optical properties of nanocrystalline yttrium oxide (Y2O3) thin films

Mudavakkat, V.H.; Atuchin, Victor V.; Кручинин, В. Н.; Kayani, A.; Ramana, C. V.

doi:10.1016/j.optmat.2011.11.027

Cited by 172 publications

(64 citation statements)

References 60 publications

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“…By extrapolating the linear regime above the absorption edge to the abscissa, the point of intersection ( f ( hv ) = 0) denotes the optical bandgap. The optical bandgaps were estimated to be 5.77 eV ( T dep = 500 °C) and 5.82 eV ( T dep = 600 °C), respectively, which is in good agreement with literature values (5.60 to 6.15 eV) …”

Section: Resultssupporting

confidence: 90%

Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates

Karle

Dang

Prenzel

et al. 2015

Chemical Vapor Deposition

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Thin films of Y 2 O 3 are deposited on Si(100) and Al 2 O 3 (0001) substrates via metal-organic (MO)CVD for the first time using two closely related yttrium tris-amidinate compounds as precursors in the presence of oxygen in the temperature range 400-700 8C. The structural, morphological, and compositional features of the films are investigated in detail. At deposition temperatures of 500 8C and higher both the precursors yield polycrystalline Y 2 O 3 thin films in the cubic phase. The compositional analysis revealed the formation of nearly stoichiometric Y 2 O 3 . The optical band gaps are estimated using UVVis spectroscopy. Preliminary electrical measurements are performed in the form of a metal oxide semiconductor (MOS) structure of Al/Y 2 O 3 /p-Si/Ag. Leakage currents and dielectric constants are also determined.

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Section: Resultssupporting

confidence: 90%

Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates

Karle

Dang

Prenzel

et al. 2015

Chemical Vapor Deposition

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“…Such behavior was also noted in sputter-deposited Y 2 O 3 films. 39 The effect of microstructure was also reflected in the electrical resistivity analysis of the Ga 2 O 3 films. The electrical resistivity usually becomes higher with grain size reduction due to the increasing grain boundary volume and associated impedance to the flow of charge carriers.…”

Section: Discussionmentioning

confidence: 99%

“…The experimental parameters obtained by SE are the angles W (azimuth) and D (phase change), which are related to the microstructure and optical properties, defined by [36][37][38][39][40] where R p and R s are the complex reflection coefficients of the light polarized parallel and perpendicular to the plane of incidence, respectively. The spectral dependencies of the ellipsometric parameters, W and D, determined for Ga 2 O 3 films grown at various temperatures are shown in Fig.…”

Section: Optical Constants-spectroscopic Ellipsometrymentioning

confidence: 99%

Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

Ramana¹,

Rubio²,

Barraza³

et al. 2014

Journal of Applied Physics

159

112

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Comparative study between erbium and erbium oxide-doped diamondlike carbon films deposited by pulsed laser deposition technique Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films Gallium oxide (Ga 2 O 3 ) thin films were made by sputter deposition employing a Ga 2 O 3 ceramic target for sputtering. The depositions were made over a wide range of substrate temperatures (T s ), from 25 to 600 C. The effect of T s on the chemical bonding, surface morphological characteristics, optical constants, and electrical properties of the grown films was evaluated using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and four-point probe measurements. XPS analyses indicate the binding energies (BE) of the Ga 2p doublet, i.e., the Ga 2p 3/2 and Ga 2p 1/2 peaks, are located at 1118.0 and 1145.0 eV, respectively, characterizing gallium in its highest chemical oxidation state (Ga 3þ ) in the grown films. The core level XPS spectra of O 1s indicate that the peak is centered at a BE $ 531 eV, which is also characteristic of Ga-O bonds in the Ga 2 O 3 phase. The granular morphology of the nanocrystalline Ga 2 O 3 films was evident from AFM measurements, which also indicate that the surface roughness of the films increases from 0.5 nm to 3.0 nm with increasing T s . The SE analyses indicate that the index of refraction (n) of Ga 2 O 3 films increases with increasing T s due to improved structural quality and packing density of the films. The n(k) of all the Ga 2 O 3 films follows the Cauchy's dispersion relation. The room temperature electrical resistivity was high ($200 X-cm) for amorphous Ga 2 O 3 films grown at T s ¼ RT-300 C and decreased to $1 X-cm for nanocrystalline Ga 2 O 3 films grown at T s ! 500-600 C. A correlation between growth conditions, microstructure, optical constants, and electrical properties of Ga 2 O 3 films is derived. V C 2014 AIP Publishing LLC.

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“…Alternatively, some researchers deposited the film at elevated temperatures. They found that crystallinity and density improves with higher deposition temperature [7,[35][36][37]. Finally, others have used ion-beam-assisted deposition to densify films as they are being deposited [38].…”

Section: Sample Preparation and Characterizationmentioning

confidence: 99%

Y₂O₃ optical constants between 5 nm and 50 nm

Muhlestein¹,

Smith²,

Miles³

et al. 2019

Opt. Express

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We report optical constants of e-beam evaporated yttrium oxide Y 2 O 3 thin films as determined from angle-dependent reflectance measurements at wavelengths from 5 to 50 nm. Samples were measured using synchrotron radiation at the Advanced Light Source. The experimental reflectance data were fit to obtain values for the index of refraction and thin film roughness. We compare our computed constants with those of previous researchers and those computed using the independent atom approximation from the CXRO website. We found that the index of refraction near 36 nm is much lower than previous data from Tomiki as reported by Palik. The real part of the optical constants is about 10% to 15% below CXRO values for wavelengths between 17 nm and 30 nm. Films were also characterized chemically, structurally, and optically by ellipsometry and atomic force microscopy.

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Structure, morphology and optical properties of nanocrystalline yttrium oxide (Y2O3) thin films

Cited by 172 publications

References 60 publications

Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates

Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates

Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

Y₂O₃ optical constants between 5 nm and 50 nm

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Structure, morphology and optical properties of nanocrystalline yttrium oxide (Y2O3) thin films

Cited by 172 publications

References 60 publications

Metal‐organic CVD of Y2O3 Thin Films using Yttrium tris‐amidinates

Metal‐organic CVD of Y2O3 Thin Films using Yttrium tris‐amidinates

Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

Y2O3 optical constants between 5 nm and 50 nm

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Product

Resources

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Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates

Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates

Y₂O₃ optical constants between 5 nm and 50 nm