Structure, morphology and electrical transport properties of the Ti3AlC2 materials

Goc, Kamil; Prendota, Witold; Chlubny, L.; Strączek, Tomasz; Tokarz, W.; Borowiak, P.; Witulska, Katarzyna; Bućko, Mirosław M.; Przewoźnik, J.; Lis, Jerzy

doi:10.1016/j.ceramint.2018.07.045

Cited by 31 publications

(20 citation statements)

References 40 publications

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“…Materials contain about 90% of MAX phase and it can be noticed that this is slightly higher than for the starting materials, indicating that during the hot pressing process, the TiC and TiSi 2 impurities convert into the MAX phase. A similar effect was observed in our previous study [19]. Narrow lines of XRD patterns reveal their good crystallinity.…”

Section: Characterization Of the Crystallographic Structuresupporting

confidence: 90%

“…Usually, the Ti3(Al1−xSix)C2 compounds are synthesized from pure elemental powders with different stoichiometry x [31]. Following our recent work on Ti3AlC2 material [19], in this paper, we present results on the synthesis and characterization of three different Ti3(Al1-…”

Section: Introductionmentioning

confidence: 98%

“…A number of papers report on several methods, which can be used to obtain them as bulk materials. They include hot isostatic pressing [7][8][9], microwave sintering [10], arc melting [11,12], annealing [13] spark plasma sintering [14][15][16][17], and self-propagating high-temperature synthesis (SHS) [18][19][20][21][22][23][24], usually followed by hot pressing sintering [18,22,25]. To obtain them in the form of thin films, physical or chemical vapour-deposition (PVD or CVD) can be used [2,12,26].…”

Section: Introductionmentioning

confidence: 99%

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Structure, Morphology, Heat Capacity, and Electrical Transport Properties of Ti3(Al,Si)C2 Materials

et al. 2021

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A study of Ti3Al1−xSixC2 (x = 0 to x = 1) MAX-phase alloys is reported. The materials were obtained from mixtures of Ti3AlC2 and Ti3SiC2 powders with hot pressing sintering technique. They were characterised with X-ray diffraction, heat capacity, electrical resistivity, and magnetoresistance measurements. The results show a good quality crystal structure and metallic properties with high residual resistivity. The resistivity weakly varies with Si doping and shows a small, positive magnetoresistance effect. The magnetoresistance exhibits a quadratic dependence on the magnetic field, which indicates a dominant contribution from open electronic orbits. The Debye temperatures and Sommerfeld coefficient values derived from specific heat data show slight variations with Si content, with decreasing tendency for the former and an increase for the latter. Experimental results were supported by band structure calculations whose results are consistent with the experiment concerning specific heat, resistivity, and magnetoresistance measurements. In particular, they reveal that of the s-electrons at the Fermi level, those of Al and Si have prevailing density of states and, thus predominantly contribute to the metallic conductivity. This also shows that the high residual resistivity of the materials studied is an intrinsic effect, not due to defects of the crystal structure.

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Section: Characterization Of the Crystallographic Structuresupporting

confidence: 90%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Structure, Morphology, Heat Capacity, and Electrical Transport Properties of Ti3(Al,Si)C2 Materials

et al. 2021

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“…The properties of ternary carbides, such as Ti 2 AlC, Ti 3 AlC 2 , or Ti 3 SiC 2 , are widely investigated [8][9][10], and various fields, such as nuclear radiation protection [11], wear resistance [12], catalysis [13] and battery electrodes [14], have great application potential. However, the characteristics and application of ternary nitrides, such as Ti 2 AlN and Ti 4 AlN 3 , are less investigated.…”

Section: Introductionmentioning

confidence: 99%

Formation Mechanism of High-Purity Ti2AlN Powders under Microwave Sintering

Tang

Lin

et al. 2020

Materials

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In the present study, high-purity ternary-phase nitride (Ti2AlN) powders were synthesized through microwave sintering using TiH2, Al, and TiN powders as raw materials. X-ray diffraction (XRD), differential scanning calorimetry (DSC), transmission electron microscopy (TEM), and scanning electron microscopy (SEM) were adopted to characterize the as-prepared powders. It was found that the Ti2AlN powder prepared by the microwave sintering of the 1TiH2/1.15Al/1TiN mixture at 1250 °C for 30 min manifested great purity (96.68%) with uniform grain size distribution. The formation mechanism of Ti2AlN occurred in four stages. The solid-phase reaction of Ti/Al and Ti/TiN took place below the melting point of aluminum and formed Ti2Al and TiN0.5 phases, which were the main intermediates in Ti2AlN formation. Therefore, the present work puts forward a favorable method for the preparation of high-purity Ti2AlN powders.

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“…many studies have been conducted focusing on methods for pressureless sintering of Ti 3 AlC 2 powder, such as pressureless sintering (PS), 12 combustion synthesis (CS), 13,14 self-propagating high-temperature synthesis (SHS), 15,16 laser melting (LM), 17 and the molten salt method (MSM). 18 However, it was found that Ti 3 AlC 2 powders tend to decomposition at high temperature and the synthesis reactions were difficult to control.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and formation mechanism of high‐purity Ti₃AlC₂ powders by microwave sintering

Chen

Tang

Shi

et al. 2020

Int J Applied Ceramic Tech

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High-purity titanium aluminum carbide (Ti 3 AlC 2 ) powders were synthesized by a microwave sintering method using different titanium sources as raw materials. The prepared products were characterized by differential scanning calorimetry (DSC), X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The results indicated that the synthesized Ti 3 AlC 2 powders have high purity (97.5%) and even distribution of the grain size when using a 3TiH 2 /1.2Al/2C mixture as raw materials when the microwave sintering temperature and time were 1300°C and 30 minutes, respectively. The formation mechanism of the Ti 3 AlC 2 is described as proceeding via four stages. The solid-phase reaction between titanium and aluminum occurs below the melting point of aluminum and the main product is a Ti 3 Al phase, which is an observed intermediate compound for the formation of Ti 2 AlC and Ti 3 AlC 2 . Thus, this study provides a beneficial approach to low-temperature synthesis of high-purity Ti 3 AlC 2 materials. K E Y W O R D Shigh purity, MAX phases, microwave, powders, synthesis How to cite this article: Chen W, Tang J, Shi X, Ye N, Yue Z, Lin X. Synthesis and formation mechanism of high-purity Ti 3 AlC 2 powders by microwave sintering. Int J Appl Ceram Technol. 2020;17:778-789. https ://doi.

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Structure, morphology and electrical transport properties of the Ti3AlC2 materials

Cited by 31 publications

References 40 publications

Structure, Morphology, Heat Capacity, and Electrical Transport Properties of Ti3(Al,Si)C2 Materials

Structure, Morphology, Heat Capacity, and Electrical Transport Properties of Ti3(Al,Si)C2 Materials

Formation Mechanism of High-Purity Ti2AlN Powders under Microwave Sintering

Synthesis and formation mechanism of high‐purity Ti₃AlC₂ powders by microwave sintering

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Structure, morphology and electrical transport properties of the Ti3AlC2 materials

Cited by 31 publications

References 40 publications

Structure, Morphology, Heat Capacity, and Electrical Transport Properties of Ti3(Al,Si)C2 Materials

Structure, Morphology, Heat Capacity, and Electrical Transport Properties of Ti3(Al,Si)C2 Materials

Formation Mechanism of High-Purity Ti2AlN Powders under Microwave Sintering

Synthesis and formation mechanism of high‐purity Ti3AlC2 powders by microwave sintering

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Synthesis and formation mechanism of high‐purity Ti₃AlC₂ powders by microwave sintering