Structure, magnetic properties and magnetostriction of Fe81Ga19 thin films

Wang, B.W.; Li, S.Y.; Zhou, Yan; Huang, Wenmei; Cao, Shuying

doi:10.1016/j.jmmm.2007.08.022

Cited by 34 publications

(10 citation statements)

References 18 publications

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“…For example, Hatrrick-Simpers et al [13] determined that the magnetostriction magnitude in Fe-Ga thin films reached a maximum value of about 190 ppm when the percentage of Ga was 32 at. %., while Wang et al [14] found that the magnetostriction of Fe 81 Ga 19 thin films was about 42 ppm at a field of 5kA/m and thickness 660 nm. Morley et al [15,16] developed a co-sputtering-evaporation technique which is suitable for growing thin FeGa films and overcomes the difficulties of sputtering Ga.…”

Section: Introductionmentioning

confidence: 96%

Fabrication and characterization of magnetostrictive amorphous FeGaSiB thin films

Abbas

Morley

2017

Journal of Magnetism and Magnetic Materials

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In this work, amorphous FeSiB and FeGaSiB thin films have been fabricated on silicon substrates using a co-sputtering-evaporation deposition technique. The effect of adding gallium into FeSiB (Metglas) thin films on the structure, magnetic properties and magnetostriction have been studied. From x-ray diffraction (XRD), all the films were amorphous and the observed peaks were for the Si substrate. X-ray Photoelectron Spectroscopy (XPS) measurements were carried out to determine the film's composition, which was found to be Fe 83 Ga 11 Si 5.2 B 0.8. Atomic force microscopy (AFM) images were taken to measure the film thickness along with studying the surface topography. It was found that the film surface had an average roughness of 0.461 nm. For both FeSiB and FeGaSiB thin films, the effect of the thickness of the films on the magnetic properties and magnetostriction were investigated. The results showed that adding Ga into the FeSiB films changed the magnetic properties by reducing the saturation induction along with changing the magnetic anisotropy from uniaxial to isotropic. For the FeGaSiB films, the coercive field decreased and the saturation field (H s) increased with film thickness. The magnetostriction constants of the FeGaSiB films were all larger than the FeSiB films for thicknesses greater than 40nm.

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Section: Introductionmentioning

confidence: 96%

Fabrication and characterization of magnetostrictive amorphous FeGaSiB thin films

Abbas

Morley

2017

Journal of Magnetism and Magnetic Materials

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“…Finally, they integrated the films with an MEMS cantilever based on Si. Wang et al [20] studied the structural and magnetostrictive properties of Fe 81 Ga 19 thin films prepared by sputtering a target of composition Fe 81 Ga 19 . They fabricated films of 660 nm thickness on Si(1 0 0) substrates under Ar pressure of 1.2 Pa (12 mbar) and reported a magnetostriction constant approaching 50 ppm in as-deposited films.…”

Section: Introductionmentioning

confidence: 99%

Structure, magnetic and magnetostrictive properties of as-deposited Fe–Ga thin films

Javed

Morley

Gibbs

2009

Journal of Magnetism and Magnetic Materials

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“…α-Fe(Ga) (110), (211), (200), and Si (100) peaks in the diffraction patterns occur for the Fe-Ga thin films, and the Fe-Ga thin films consist of the α-Fe(Ga) phase with bcc cubic structure. Wang et al [16] have found that α-Fe(Ga) (110), (211), and Si (100) peaks in the diffraction patterns occur for the Fe-Ga thin films fabricated without magnetic fields. No (200) peak appears in their experiment.…”

Section: Methodsmentioning

confidence: 99%

Effect of fabrication parameters on the microstructure, in-plane anisotropy and magnetostriction of Fe-Ga thin films

et al. 2010

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The microstructure, in-plane anisotropy, and magnetic properties of Fe-Ga thin films were investigated by X-ray diffraction analysis, vibrating sample magnetometer, and capacitive cantilever method. The in-plane induced anisotropy is well formed by the applied magnetic field during sputtering, and the anisotropy field H k decreases with the sputtering power increasing. The coercivity of Fe-Ga thin films decreases with increasing power when the sputtering power is less than 60 W and increases when the power is larger than 60 W. The magnetostriction of the thin films reaches 66 × 10 −6 at the sputtering power of 60 W. Excellent Fe-Ga films, which exhibit good field sensitivity, low coercivity and high magnetostriction, have been fabricated at the power of 60 W, and they can be used as the materials of magnetostrictive transducers.

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Structure, magnetic properties and magnetostriction of Fe81Ga19 thin films

Cited by 34 publications

References 18 publications

Fabrication and characterization of magnetostrictive amorphous FeGaSiB thin films

Fabrication and characterization of magnetostrictive amorphous FeGaSiB thin films

Structure, magnetic and magnetostrictive properties of as-deposited Fe–Ga thin films

Effect of fabrication parameters on the microstructure, in-plane anisotropy and magnetostriction of Fe-Ga thin films

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