Abstract:Complex structure reaction-bonded silicon carbide (RB-SiC) can be prepared by reactive melt infiltration (RMI) and digital light processing (DLP). However, the strength and modulus of RB-SiC prepared by DLP are not sufficient, due to its low solid content (around 40 vol.%), compared with the traditional fabrication techniques (solid content > 60 vol.%). With this understanding, a new method to improve the properties of RB-SiC was proposed, by the impregnation of composite precursor into the porous preform. … Show more
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