In oxides with perovskite-type of structure, oxygen can be a sufficiently mobile defect even at room temperature when an electric field of sufficient strength (~1000 V/mm) is applied. Our in-situ investigations of metal/SrTiO 3 junctions revealed reversible structural changes and the formation of nonstoichiometric regions during the application of external electric fields. This might be caused by a field-induced redistribution of oxygen vacancies. The investigations were carried out using wide-angle X-ray scattering, X-ray absorption spectroscopy, nanoindentation and time-dependent electric measurements. Motivated by the successful use of SrTiO 3 with different doping metals for memory cells on the basis of resistive switching in combination with the findings on the major importance of oxygen vacancy redistribution, we want to show the possibility of realizing a resistance change memory based on vacancy-doped SrTiO 3. The formation of corresponding metal/SrTiO 3 junctions in an electric field will be discussed as well as the switching between ohmic and Schottky-type resistive properties. A notable hysteresis in the current-voltage characteristics can be used to carry out Write, Read and Erase operations to test the memory cell properties of such junctions. But whereas the electric field-induced formation of Schottkytype junctions may be explained by oxygen vacancy redistribution, the resistive switching is preferably discussed in terms of vacancies serving as electron trap states at the metal/oxide interface.