2008
DOI: 10.1103/physrevb.77.085401
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Structure determination of monolayer-by-monolayer grownLa1xSrxMnO3thin films and the onset of magnetoresistance

Abstract: Surface x-ray diffraction was used to determine the atomic structures of La 1−x Sr x MnO 3 thin films, grown monolayer by monolayer on SrTiO 3 by pulsed laser deposition. Structures for one-, two-, three-, four-, six-, and nine-monolayer-thick films were solved using the Coherent Bragg rod analysis phase-retrieval method and subsequent structural refinement. Four important results were found. First, the out-of-plane lattice constant is elongated across the substrate-film interface. Second, the transition from … Show more

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Cited by 80 publications
(66 citation statements)
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“…These values were in agreement with sharp RHEED specular spot whose intensity was comparable between the starting STO substrate and the LCMO at the end of growth. In order to obtain a reliable value for XAS sampling depth d, nonuniform film thickness or interdiffusion with the substrate should be carefully checked and excluded, as they would tend to increase the measured value for d. We can estimate an upper limit for the interdiffusion between the STO substrate and the LCMO overlayer to about one unit cell [26]. Summing this to an error in thickness of ±0.5 uc gives the error bars used during fits of the sampling depth discussed in Sec.…”
Section: Thin Film Characterizationmentioning
confidence: 99%
“…These values were in agreement with sharp RHEED specular spot whose intensity was comparable between the starting STO substrate and the LCMO at the end of growth. In order to obtain a reliable value for XAS sampling depth d, nonuniform film thickness or interdiffusion with the substrate should be carefully checked and excluded, as they would tend to increase the measured value for d. We can estimate an upper limit for the interdiffusion between the STO substrate and the LCMO overlayer to about one unit cell [26]. Summing this to an error in thickness of ±0.5 uc gives the error bars used during fits of the sampling depth discussed in Sec.…”
Section: Thin Film Characterizationmentioning
confidence: 99%
“…Our films show an increase of c when reducing the thickness (in agreement with films of ref. 15). Further examining the data of reference 15, one sees that while the first few layers at the interface exhibit c values larger than the STO one (cumulative displacement compared to c STO : ∆z positive and increasing), after about 3 monolayers c retrieves a value smaller than a = a STO (decreasing ∆z).…”
mentioning
confidence: 99%
“…For instance the dominating d z 2 occupation can be associated with only the first 2-3 ML (see T c or ∆z variation in the 9 ML film of ref. 15). In the next layers the e Mn g orbitals occupations start to relax toward a more balanced one as supported by the increase of both T c and conductivity as a function of the number of layers in 3 to 8 ML films.…”
mentioning
confidence: 99%
“…This offstoichiometry is accommodated by the introduction of extended defects and leads to a reduction of the magnetization and an increase of the resistivity such that the multilayers remain insulating at all temperatures. The laser fluence corresponding to the smaller spot size is typical for previous PLD-grown LSMO/STO multilayers (9,30), which might explain their inferior properties. Interdiffusion across the interface and off-stoichiometry in the LSMO layer such as that observed in Fig.…”
mentioning
confidence: 99%