Abstract:Photon trapping structure in HgCdTe mid-wavelength infrared detectors is investigated in this study by exploiting the finite-difference time-domain (FDTD) technique. The quantum efficiency and the current-voltage characteristics have been numerically simulated, using commercial Technology Computer Aided Design ( TCAD ) software Apsys. Simulation results indicate that in contrast to the regular mesa structure, the photon trapping structure can reduce dark current and noise without degrading quantum efficiency.
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