In this work, we have carefully examined
the morphology of semiconducting
polymer:insulating polymer blends, which were deposited from inkjet
printing. We attempted to study the impact of molecular weight (MW)
of insulating polymer on the nanoscale morphology and function of
the blends. The morphology of all of the inkjet-printed samples was
characterized by small-angle neutron scattering (SANS), grazing incidence
X-ray diffraction (GIXD), and atomic force microscopy (AFM). The SANS
results show that the domain size of the blends increases by increasing
the MW of insulating polymer, while the domain purity reaches the
maximum with proper molecular weight of insulating polymer. AFM images
show that the connectivity of semiconducting polymer domains is disrupted
with addition of polystyrene (PS) with low molecular weight (M
w = 2.5K and 20K), while well-interconnected
domains are observed with addition of PS with high molecular weight
(M
w = 182K and 2000K). GIXD results indicate
that the π–π stacking distance of semiconducting
polymer can be shortened with addition of PS and decreases with an
increase of PS molecular weight from 2.5K to 182K. Further increasing
molecular weight of PS to 2000K results in very weak π–π
stacking ordering. This work demonstrates that the domain purity,
connectivity of semiconducting polymer domains, and molecular packing
are crucial for the charge transport. The judicious choice of the
MW of insulating polymer could carefully control the nanoscale morphology
of semiconducting polymer:insulating polymer blends, which could provide
blend morphology with high domain purity, well-connected domains,
along with reduced π–π stacking distance, all of
which facilitate charge transport, resulting in a significant improvement
of charge mobility.