Understanding how nanowires (NWs) grow is an important materials physics issue that not only improves our knowledge of crystal growth but also can have a large impact on our ability to self-assemble controlled nanostructures. Currently, NWs are synthesized by catalytic growth, selfassembly on supporting substrates or in solution without catalyst. Catalytic growth is believed to proceed through the vapor-liquid-solid (VLS) mechanism where the liquid-solid interface controls the growth direction. Nanowries grown without catalysts include transition, or rare-earth, metal silicide wires and fcc metals like Ag. In the latter case, it is generally assumed that NWs grow due to the competition between the strain and surface energies that favors one-dimensional structure above a certain size limit [ 1 ]. In case of Ag nanowires on Si(001), Tersoff and Tromp [ 1 ] reported that wires are grown rotated by 45˚ with Ag[100]||Si[110] and a 6% misfit strain between Ag and Si. This strain is then used to explain the Ag nanowire growth. However, the orientation relationship reported by Tersoff and Tromp is very different from previous report on Ag films grown on Si(001). To examine whether the nanowires adapt a different epitaxial relationship than thin films and to study the nanowire growth, we carried out a combined low-energy electron microscopy (LEEM) and transmission electron microscopy (TEM) investigation.To observe the shape transition from islands to wires, Ag nanoclusters (islands) were first formed by depositing Ag on hydrogen terminated Si(001) [ 2, 3 ]. The experiment was performed on an IBM-built LEEM maintained at the Materials Research Laboratory, University of Illinois UrbanaChampaign (UIUC). In-situ observation of NW growth was achieved by following the evolution of nanometer-sized Ag islands during annealing using LEEM. After growth in a adjacent growth chamber the substrate was transferred to the LEEM and annealed under 10 -9 Pa. Micrometer long Ag NWs were formed by depositing Ag at 210 °C and subsequent annealing at temperatures between 400 °C and 450 °C. Ex-situ TEM observations were performed on samples pre-thinned for electron transparency and chemically prepared H-terminated Si(001). Figure 1 shows the growth of two clusters; one grows into a NW while the other into a rectangular island (in projection). The wire growth occurred during annealing at 450˚C of 5 ML Ag deposited at 300˚C on H-Si(001)for a period of 270 seconds. The growth process was captured by LEEM in the early stage of the growth starting from a nanoparticle. Initially, the two Ag clusters were too small to be observed (nominal LEEM resolution is 10 nm). After 6 seconds of observation, two clusters became visible (Fig. 1 top-left). Afterward, one of the two clusters at the lower position start to grow toward the other cluster to form a wire. To quantify the growth process, we measured the width and length of the NW. Using the initial positions of the clusters as reference, we further divided the length into L1 and L2, corresponding to the g...